Field-plated GaAs on Si substrate HEMT technology for microwave and power electronics applications (invited)

Hsien Chin Chiu; Hsiang Chun Wang; Chih Wei Yang; Fan Hsiu Huang; Hsuan Ling Kao

doi:10.1109/EDSSC.2014.7061286

Field-plated GaAs on Si substrate HEMT technology for microwave and power electronics applications (invited)

Hsien Chin Chiu, Hsiang Chun Wang, Chih Wei Yang, Fan Hsiu Huang, Hsuan Ling Kao

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

AlGaN/GaN high electron mobility transistors (HEMTs) have potential applications in the next generation high-power microwave and switching devices. They can maintain robust device characteristics under high temperature operation and high voltage conditions because of their superior material properties [1]. Sapphire and SiC are popularly used as substrate materials for GaN optoelectronic devices. Recently GaN on Si (111) technology has found applications in electronic devices because of its low cost and superior scalability of wafer size. In this study, 0.5μm gate length GaN on Si HEMT technology was proposed and demonstrated with field-plate technology. This GaN on Si HEMT process realized the high performance microwave and power electronics and circuits successfully.

Original language	English
Title of host publication	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781479923342
DOIs	https://doi.org/10.1109/EDSSC.2014.7061286
State	Published - 13 03 2014
Event	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 - Chengdu, China Duration: 18 06 2014 → 20 06 2014

Publication series

Name	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014

Conference

Conference	2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014
Country/Territory	China
City	Chengdu
Period	18/06/14 → 20/06/14

Bibliographical note

Publisher Copyright:
© 2014 IEEE.

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10.1109/EDSSC.2014.7061286

Cite this

Chiu, H. C., Wang, H. C., Yang, C. W., Huang, F. H., & Kao, H. L. (2014). Field-plated GaAs on Si substrate HEMT technology for microwave and power electronics applications (invited). In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 Article 7061286 (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDSSC.2014.7061286

Chiu, Hsien Chin ; Wang, Hsiang Chun ; Yang, Chih Wei et al. / Field-plated GaAs on Si substrate HEMT technology for microwave and power electronics applications (invited). 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

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title = "Field-plated GaAs on Si substrate HEMT technology for microwave and power electronics applications (invited)",

abstract = "AlGaN/GaN high electron mobility transistors (HEMTs) have potential applications in the next generation high-power microwave and switching devices. They can maintain robust device characteristics under high temperature operation and high voltage conditions because of their superior material properties [1]. Sapphire and SiC are popularly used as substrate materials for GaN optoelectronic devices. Recently GaN on Si (111) technology has found applications in electronic devices because of its low cost and superior scalability of wafer size. In this study, 0.5μm gate length GaN on Si HEMT technology was proposed and demonstrated with field-plate technology. This GaN on Si HEMT process realized the high performance microwave and power electronics and circuits successfully.",

author = "Chiu, {Hsien Chin} and Wang, {Hsiang Chun} and Yang, {Chih Wei} and Huang, {Fan Hsiu} and Kao, {Hsuan Ling}",

note = "Publisher Copyright: {\textcopyright} 2014 IEEE.; 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014 ; Conference date: 18-06-2014 Through 20-06-2014",

year = "2014",

month = mar,

day = "13",

doi = "10.1109/EDSSC.2014.7061286",

language = "英语",

series = "2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014",

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Chiu, HC, Wang, HC, Yang, CW, Huang, FH & Kao, HL 2014, Field-plated GaAs on Si substrate HEMT technology for microwave and power electronics applications (invited). in 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014., 7061286, 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, Institute of Electrical and Electronics Engineers Inc., 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014, Chengdu, China, 18/06/14. https://doi.org/10.1109/EDSSC.2014.7061286

Field-plated GaAs on Si substrate HEMT technology for microwave and power electronics applications (invited). / Chiu, Hsien Chin; Wang, Hsiang Chun; Yang, Chih Wei et al.
2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc., 2014. 7061286 (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - Field-plated GaAs on Si substrate HEMT technology for microwave and power electronics applications (invited)

AU - Chiu, Hsien Chin

AU - Wang, Hsiang Chun

AU - Yang, Chih Wei

AU - Huang, Fan Hsiu

AU - Kao, Hsuan Ling

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N2 - AlGaN/GaN high electron mobility transistors (HEMTs) have potential applications in the next generation high-power microwave and switching devices. They can maintain robust device characteristics under high temperature operation and high voltage conditions because of their superior material properties [1]. Sapphire and SiC are popularly used as substrate materials for GaN optoelectronic devices. Recently GaN on Si (111) technology has found applications in electronic devices because of its low cost and superior scalability of wafer size. In this study, 0.5μm gate length GaN on Si HEMT technology was proposed and demonstrated with field-plate technology. This GaN on Si HEMT process realized the high performance microwave and power electronics and circuits successfully.

AB - AlGaN/GaN high electron mobility transistors (HEMTs) have potential applications in the next generation high-power microwave and switching devices. They can maintain robust device characteristics under high temperature operation and high voltage conditions because of their superior material properties [1]. Sapphire and SiC are popularly used as substrate materials for GaN optoelectronic devices. Recently GaN on Si (111) technology has found applications in electronic devices because of its low cost and superior scalability of wafer size. In this study, 0.5μm gate length GaN on Si HEMT technology was proposed and demonstrated with field-plate technology. This GaN on Si HEMT process realized the high performance microwave and power electronics and circuits successfully.

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Chiu HC, Wang HC, Yang CW, Huang FH, Kao HL. Field-plated GaAs on Si substrate HEMT technology for microwave and power electronics applications (invited). In 2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014. Institute of Electrical and Electronics Engineers Inc. 2014. 7061286. (2014 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2014). doi: 10.1109/EDSSC.2014.7061286

Field-plated GaAs on Si substrate HEMT technology for microwave and power electronics applications (invited)

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