Finite element modeling of residual mechanical stress in partial SOI structure due to wafer bonding processing

Guangyu Huang; Cher Ming Tan; Zhenghao Gan; Wei Jun; Guan Zhang; Weibo Yu

Finite element modeling of residual mechanical stress in partial SOI structure due to wafer bonding processing

Guangyu Huang, Cher Ming Tan^*, Zhenghao Gan, Wei Jun, Guan Zhang, Weibo Yu

^*Corresponding author for this work

Research output: Contribution to conference › Conference Paper › peer-review

4 Scopus citations

Abstract

The residual mechanical stresses in partial SOI structures generated during wafer bonding processing were simulated using finite element method in this work. By employing the Box-Behnken design for the response surface method, statistical models were established to relate the computational stresses to the structural geometric parameters, including oxide length (and width), oxide thickness and work layer thickness. With these statistical models, the geometrical parameters of the structure could be optimized to effectively reduce the residual mechanical stresses in partial SOI structures.

Original language	English
Pages	189-192
Number of pages	4
State	Published - 2004
Externally published	Yes
Event	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 - , Taiwan Duration: 05 07 2004 → 08 07 2004

Conference

Conference	Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004
Country/Territory	Taiwan
Period	05/07/04 → 08/07/04

Cite this

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title = "Finite element modeling of residual mechanical stress in partial SOI structure due to wafer bonding processing",

abstract = "The residual mechanical stresses in partial SOI structures generated during wafer bonding processing were simulated using finite element method in this work. By employing the Box-Behnken design for the response surface method, statistical models were established to relate the computational stresses to the structural geometric parameters, including oxide length (and width), oxide thickness and work layer thickness. With these statistical models, the geometrical parameters of the structure could be optimized to effectively reduce the residual mechanical stresses in partial SOI structures.",

author = "Guangyu Huang and Tan, {Cher Ming} and Zhenghao Gan and Wei Jun and Guan Zhang and Weibo Yu",

year = "2004",

language = "英语",

pages = "189--192",

note = "Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004 ; Conference date: 05-07-2004 Through 08-07-2004",

}

Finite element modeling of residual mechanical stress in partial SOI structure due to wafer bonding processing. / Huang, Guangyu; Tan, Cher Ming; Gan, Zhenghao et al.
2004. 189-192 Paper presented at Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004, Taiwan.

Research output: Contribution to conference › Conference Paper › peer-review

TY - CONF

T1 - Finite element modeling of residual mechanical stress in partial SOI structure due to wafer bonding processing

AU - Huang, Guangyu

AU - Tan, Cher Ming

AU - Gan, Zhenghao

AU - Jun, Wei

AU - Zhang, Guan

AU - Yu, Weibo

PY - 2004

Y1 - 2004

N2 - The residual mechanical stresses in partial SOI structures generated during wafer bonding processing were simulated using finite element method in this work. By employing the Box-Behnken design for the response surface method, statistical models were established to relate the computational stresses to the structural geometric parameters, including oxide length (and width), oxide thickness and work layer thickness. With these statistical models, the geometrical parameters of the structure could be optimized to effectively reduce the residual mechanical stresses in partial SOI structures.

AB - The residual mechanical stresses in partial SOI structures generated during wafer bonding processing were simulated using finite element method in this work. By employing the Box-Behnken design for the response surface method, statistical models were established to relate the computational stresses to the structural geometric parameters, including oxide length (and width), oxide thickness and work layer thickness. With these statistical models, the geometrical parameters of the structure could be optimized to effectively reduce the residual mechanical stresses in partial SOI structures.

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M3 - 论文

AN - SCOPUS:14844307078

SP - 189

EP - 192

T2 - Proceedings of the 11th International Symposium on the Physical and Failure Analysis of Integrated Circuits, IPFA 2004

Y2 - 5 July 2004 through 8 July 2004

ER -

Finite element modeling of residual mechanical stress in partial SOI structure due to wafer bonding processing

Abstract

Conference

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