Flash memory device characteristics of atomic layer deposited crystallite A12O3 films with large memory window and long retention

S. Maikap; W. Banerjee; S. Z. Rahaman; A. Das

doi:10.1109/SNW.2008.5418388

Flash memory device characteristics of atomic layer deposited crystallite A1₂O₃ films with large memory window and long retention

S. Maikap^*, W. Banerjee, S. Z. Rahaman, A. Das

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Enhanced non-volatile memory device characteristics of crystallite A1 ₂O₃) film (>900°C) with a large hysteresis memory window of ΔV ≈ 9.8V under a gate voltage of ±15V have been observed due to crystallization of the A1₂O₃) film. The hysteresis memory window of ΔV ≈ 3.8V under a gate voltage of ±10V is also observed. Both program and erase speeds of ΔV∼2.6V@1s are achieved under Fowler-Nordheim injections. A large memory window of ΔV ≈ 4.0 V after ∼2×10⁶s of retention (∼30% charge loss) is obtained. The high-performance ALD crystallite A1₂O₃ flash memory devices can be operated at <10V.

Original language	English
Title of host publication	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
DOIs	https://doi.org/10.1109/SNW.2008.5418388
State	Published - 2008
Event	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 - Honolulu, HI, United States Duration: 15 06 2008 → 16 06 2008

Publication series

Name	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008

Conference

Conference	IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008
Country/Territory	United States
City	Honolulu, HI
Period	15/06/08 → 16/06/08

Access to Document

10.1109/SNW.2008.5418388

Cite this

@inproceedings{c29cce72ddb041539ede28f1256312fc,

title = "Flash memory device characteristics of atomic layer deposited crystallite A12O3 films with large memory window and long retention",

abstract = "Enhanced non-volatile memory device characteristics of crystallite A1 2O3) film (>900°C) with a large hysteresis memory window of ΔV ≈ 9.8V under a gate voltage of ±15V have been observed due to crystallization of the A12O3) film. The hysteresis memory window of ΔV ≈ 3.8V under a gate voltage of ±10V is also observed. Both program and erase speeds of ΔV∼2.6V@1s are achieved under Fowler-Nordheim injections. A large memory window of ΔV ≈ 4.0 V after ∼2×106s of retention (∼30% charge loss) is obtained. The high-performance ALD crystallite A12O3 flash memory devices can be operated at <10V.",

author = "S. Maikap and W. Banerjee and Rahaman, {S. Z.} and A. Das",

year = "2008",

doi = "10.1109/SNW.2008.5418388",

language = "英语",

isbn = "9781424420711",

series = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

booktitle = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008",

note = "IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008 ; Conference date: 15-06-2008 Through 16-06-2008",

}

Maikap, S, Banerjee, W, Rahaman, SZ & Das, A 2008, Flash memory device characteristics of atomic layer deposited crystallite A1₂O₃ films with large memory window and long retention. in IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008., 5418388, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008, Honolulu, HI, United States, 15/06/08. https://doi.org/10.1109/SNW.2008.5418388

Flash memory device characteristics of atomic layer deposited crystallite A1₂O₃ films with large memory window and long retention. / Maikap, S.; Banerjee, W.; Rahaman, S. Z. et al.
IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008. 2008. 5418388 (IEEE 2008 Silicon Nanoelectronics Workshop, SNW 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Flash memory device characteristics of atomic layer deposited crystallite A12O3 films with large memory window and long retention

AU - Maikap, S.

AU - Banerjee, W.

AU - Rahaman, S. Z.

AU - Das, A.

PY - 2008

Y1 - 2008

N2 - Enhanced non-volatile memory device characteristics of crystallite A1 2O3) film (>900°C) with a large hysteresis memory window of ΔV ≈ 9.8V under a gate voltage of ±15V have been observed due to crystallization of the A12O3) film. The hysteresis memory window of ΔV ≈ 3.8V under a gate voltage of ±10V is also observed. Both program and erase speeds of ΔV∼2.6V@1s are achieved under Fowler-Nordheim injections. A large memory window of ΔV ≈ 4.0 V after ∼2×106s of retention (∼30% charge loss) is obtained. The high-performance ALD crystallite A12O3 flash memory devices can be operated at <10V.

AB - Enhanced non-volatile memory device characteristics of crystallite A1 2O3) film (>900°C) with a large hysteresis memory window of ΔV ≈ 9.8V under a gate voltage of ±15V have been observed due to crystallization of the A12O3) film. The hysteresis memory window of ΔV ≈ 3.8V under a gate voltage of ±10V is also observed. Both program and erase speeds of ΔV∼2.6V@1s are achieved under Fowler-Nordheim injections. A large memory window of ΔV ≈ 4.0 V after ∼2×106s of retention (∼30% charge loss) is obtained. The high-performance ALD crystallite A12O3 flash memory devices can be operated at <10V.

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