Flash memory device characteristics of atomic layer deposited crystallite Al2O3 films with large memory window and long retention

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2008
Event	IEEE Silicon Nanoelectronics Workshop - Honolulu, Hawaii, USA Duration: 15 06 2008 → 16 06 2008

Conference	IEEE Silicon Nanoelectronics Workshop
Period	15/06/08 → 16/06/08

Cite this

@conference{069d0b112137428491ae1ebbe1800344,

title = "Flash memory device characteristics of atomic layer deposited crystallite Al2O3 films with large memory window and long retention",

author = "Siddheswar Maikap and W. Banerjee and Rahaman, \{S. Z.\} and Atanu Das",

year = "2008",

language = "American English",

note = "IEEE Silicon Nanoelectronics Workshop ; Conference date: 15-06-2008 Through 16-06-2008",

}