Fluorinated ALP Al2O3 gate dielectrics by CF 4 plasma

Chao Sung Lai; Kung Ming Fan; Yi Jung Chen; Kuo Hui Su; Chang Rong Wu; Shian Jyh Lin; Chung Yuan Lee

Fluorinated ALP Al₂O₃ gate dielectrics by CF ₄ plasma

Chao Sung Lai^*, Kung Ming Fan, Yi Jung Chen, Kuo Hui Su, Chang Rong Wu, Shian Jyh Lin, Chung Yuan Lee

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Original language	English
Title of host publication	2005 International Semiconductor Device Research Symposium
Pages	266-267
Number of pages	2
State	Published - 2005
Event	2005 International Semiconductor Device Research Symposium - Bethesda, MD, United States Duration: 07 12 2005 → 09 12 2005

Publication series

Name	2005 International Semiconductor Device Research Symposium
Volume	2005

Conference

Conference	2005 International Semiconductor Device Research Symposium
Country/Territory	United States
City	Bethesda, MD
Period	07/12/05 → 09/12/05

Cite this

@inproceedings{13013613288649ee85e0e350851da90f,

title = "Fluorinated ALP Al2O3 gate dielectrics by CF 4 plasma",

author = "Lai, {Chao Sung} and Fan, {Kung Ming} and Chen, {Yi Jung} and Su, {Kuo Hui} and Wu, {Chang Rong} and Lin, {Shian Jyh} and Lee, {Chung Yuan}",

year = "2005",

language = "英语",

isbn = "1424400848",

series = "2005 International Semiconductor Device Research Symposium",

pages = "266--267",

booktitle = "2005 International Semiconductor Device Research Symposium",

note = "2005 International Semiconductor Device Research Symposium ; Conference date: 07-12-2005 Through 09-12-2005",

}

Lai, CS, Fan, KM, Chen, YJ, Su, KH, Wu, CR, Lin, SJ & Lee, CY 2005, Fluorinated ALP Al₂O₃ gate dielectrics by CF ₄ plasma. in 2005 International Semiconductor Device Research Symposium., 1596087, 2005 International Semiconductor Device Research Symposium, vol. 2005, pp. 266-267, 2005 International Semiconductor Device Research Symposium, Bethesda, MD, United States, 07/12/05.

Fluorinated ALP Al₂O₃ gate dielectrics by CF ₄ plasma. / Lai, Chao Sung; Fan, Kung Ming; Chen, Yi Jung et al.
2005 International Semiconductor Device Research Symposium. 2005. p. 266-267 1596087 (2005 International Semiconductor Device Research Symposium; Vol. 2005).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Fluorinated ALP Al2O3 gate dielectrics by CF 4 plasma

AU - Lai, Chao Sung

AU - Fan, Kung Ming

AU - Chen, Yi Jung

AU - Su, Kuo Hui

AU - Wu, Chang Rong

AU - Lin, Shian Jyh

AU - Lee, Chung Yuan

PY - 2005

Y1 - 2005

UR - http://www.scopus.com/inward/record.url?scp=33847199698&partnerID=8YFLogxK

M3 - 会议稿件

AN - SCOPUS:33847199698

SN - 1424400848

SN - 9781424400843

T3 - 2005 International Semiconductor Device Research Symposium

SP - 266

EP - 267

BT - 2005 International Semiconductor Device Research Symposium

T2 - 2005 International Semiconductor Device Research Symposium

Y2 - 7 December 2005 through 9 December 2005

ER -

Fluorinated ALP Al2O3 gate dielectrics by CF 4 plasma

Publication series

Conference

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Cite this

Fluorinated ALP Al₂O₃ gate dielectrics by CF ₄ plasma