Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation

Kuo Lang Yeh; Ming Jer Jeng; Jenn Gwo Hwu

doi:10.1016/S0038-1101(98)00284-6

Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation

Kuo Lang Yeh
, Ming Jer Jeng
, Jenn Gwo Hwu^*

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

6 Scopus citations

Abstract

Room temperature deposition in H₂SiF₆ solution, i.e., liquid phase deposition (LPD), followed by furnace oxidation (FO) is first used to prepare fluorinated thin oxides (LPD/FO). The amount of fluorine existing in the gate oxide is controlled by varying the LPD time in this work. A turnaround breakdown behavior is observed for LPD/FO oxides with various LPD conditions. The oxide with an optimized fluorine concentration shows a significant improvement in oxide breakdown characteristics.

Original language	English
Pages (from-to)	671-676
Number of pages	6
Journal	Solid-State Electronics
Volume	43
Issue number	3
DOIs	https://doi.org/10.1016/S0038-1101(98)00284-6
State	Published - 1999
Externally published	Yes

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title = "Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation",

abstract = "Room temperature deposition in H2SiF6 solution, i.e., liquid phase deposition (LPD), followed by furnace oxidation (FO) is first used to prepare fluorinated thin oxides (LPD/FO). The amount of fluorine existing in the gate oxide is controlled by varying the LPD time in this work. A turnaround breakdown behavior is observed for LPD/FO oxides with various LPD conditions. The oxide with an optimized fluorine concentration shows a significant improvement in oxide breakdown characteristics.",

author = "Yeh, \{Kuo Lang\} and Jeng, \{Ming Jer\} and Hwu, \{Jenn Gwo\}",

year = "1999",

doi = "10.1016/S0038-1101(98)00284-6",

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volume = "43",

pages = "671--676",

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issn = "0038-1101",

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T1 - Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation

AU - Yeh, Kuo Lang

AU - Jeng, Ming Jer

AU - Hwu, Jenn Gwo

PY - 1999

Y1 - 1999

N2 - Room temperature deposition in H2SiF6 solution, i.e., liquid phase deposition (LPD), followed by furnace oxidation (FO) is first used to prepare fluorinated thin oxides (LPD/FO). The amount of fluorine existing in the gate oxide is controlled by varying the LPD time in this work. A turnaround breakdown behavior is observed for LPD/FO oxides with various LPD conditions. The oxide with an optimized fluorine concentration shows a significant improvement in oxide breakdown characteristics.

AB - Room temperature deposition in H2SiF6 solution, i.e., liquid phase deposition (LPD), followed by furnace oxidation (FO) is first used to prepare fluorinated thin oxides (LPD/FO). The amount of fluorine existing in the gate oxide is controlled by varying the LPD time in this work. A turnaround breakdown behavior is observed for LPD/FO oxides with various LPD conditions. The oxide with an optimized fluorine concentration shows a significant improvement in oxide breakdown characteristics.

UR - https://www.scopus.com/pages/publications/0033101293

U2 - 10.1016/S0038-1101(98)00284-6

DO - 10.1016/S0038-1101(98)00284-6

M3 - 文章

AN - SCOPUS:0033101293

SN - 0038-1101

VL - 43

SP - 671

EP - 676

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 3

ER -

Fluorinated thin gate oxides prepared by room temperature deposition followed by furnace oxidation

Abstract

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