Fluorine effects on the dipole structures of the Al2 O3 thin films and characterization by spectroscopic ellipsometry

Chao Sung Lai; Kung Ming Fan; Hsing Kan Peng; Shian Jyh Lin; Chung Yuan Lee; Chi Fong Ai

doi:10.1063/1.2730581

Fluorine effects on the dipole structures of the Al2 O3 thin films and characterization by spectroscopic ellipsometry

Chao Sung Lai^*, Kung Ming Fan, Hsing Kan Peng, Shian Jyh Lin, Chung Yuan Lee, Chi Fong Ai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

19 Scopus citations

Abstract

Fluorine-terminated chemical bonds and dipole structures within an Al2 O3 layer were investigated in this study. Spectroscopic ellipsometry (SE) was employed to estimate the characteristics of fluorinated Al2 O3. The parameters S0 and λ0 extracted from SE were analyzed to detect the influence of F-terminated bonding. Al-O bonds were replaced by the Al-F bonds after fluorine was implanted on the silicon substrate. A physical model of dipole structures was proposed explaining the F incorporation phenomenon.

Original language	English
Article number	172904
Journal	Applied Physics Letters
Volume	90
Issue number	17
DOIs	https://doi.org/10.1063/1.2730581
State	Published - 2007

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title = "Fluorine effects on the dipole structures of the Al2 O3 thin films and characterization by spectroscopic ellipsometry",

abstract = "Fluorine-terminated chemical bonds and dipole structures within an Al2 O3 layer were investigated in this study. Spectroscopic ellipsometry (SE) was employed to estimate the characteristics of fluorinated Al2 O3. The parameters S0 and λ0 extracted from SE were analyzed to detect the influence of F-terminated bonding. Al-O bonds were replaced by the Al-F bonds after fluorine was implanted on the silicon substrate. A physical model of dipole structures was proposed explaining the F incorporation phenomenon.",

author = "Lai, {Chao Sung} and Fan, {Kung Ming} and Peng, {Hsing Kan} and Lin, {Shian Jyh} and Lee, {Chung Yuan} and Ai, {Chi Fong}",

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language = "英语",

volume = "90",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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T1 - Fluorine effects on the dipole structures of the Al2 O3 thin films and characterization by spectroscopic ellipsometry

AU - Lai, Chao Sung

AU - Fan, Kung Ming

AU - Peng, Hsing Kan

AU - Lin, Shian Jyh

AU - Lee, Chung Yuan

AU - Ai, Chi Fong

PY - 2007

Y1 - 2007

N2 - Fluorine-terminated chemical bonds and dipole structures within an Al2 O3 layer were investigated in this study. Spectroscopic ellipsometry (SE) was employed to estimate the characteristics of fluorinated Al2 O3. The parameters S0 and λ0 extracted from SE were analyzed to detect the influence of F-terminated bonding. Al-O bonds were replaced by the Al-F bonds after fluorine was implanted on the silicon substrate. A physical model of dipole structures was proposed explaining the F incorporation phenomenon.

AB - Fluorine-terminated chemical bonds and dipole structures within an Al2 O3 layer were investigated in this study. Spectroscopic ellipsometry (SE) was employed to estimate the characteristics of fluorinated Al2 O3. The parameters S0 and λ0 extracted from SE were analyzed to detect the influence of F-terminated bonding. Al-O bonds were replaced by the Al-F bonds after fluorine was implanted on the silicon substrate. A physical model of dipole structures was proposed explaining the F incorporation phenomenon.

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U2 - 10.1063/1.2730581

DO - 10.1063/1.2730581

M3 - 文章

AN - SCOPUS:34248577655

SN - 0003-6951

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 17

M1 - 172904

ER -

Fluorine effects on the dipole structures of the Al2 O3 thin films and characterization by spectroscopic ellipsometry

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