Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

Tung Ming Pan*, Chih Hung Lu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

74 Scopus citations

Abstract

In this study, we reported the forming-free resistive switching behavior in the Ru/RE2O3/TaN (RE Nd, Dy, and Er) memory devices using thin Nd2O3, Dy2O3, and Er 2O3 films fabricated with full room temperature process. The dominant conduction mechanisms of the Ru/RE2O3/TaN devices in the low-resistance state and high-resistance state are Ohmic behavior. The Ru/Dy2O3/TaN memory device exhibited high resistance ratio, nondestructive readout, reliable data retention, and good endurance. Ru/Dy2O3/TaN memory device has a great potential for the application in nonvolatile resistive switching memory.

Original languageEnglish
Article number113509
JournalApplied Physics Letters
Volume99
Issue number11
DOIs
StatePublished - 12 09 2011

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