Abstract
In this study, we reported the forming-free resistive switching behavior in the Ru/RE2O3/TaN (RE Nd, Dy, and Er) memory devices using thin Nd2O3, Dy2O3, and Er 2O3 films fabricated with full room temperature process. The dominant conduction mechanisms of the Ru/RE2O3/TaN devices in the low-resistance state and high-resistance state are Ohmic behavior. The Ru/Dy2O3/TaN memory device exhibited high resistance ratio, nondestructive readout, reliable data retention, and good endurance. Ru/Dy2O3/TaN memory device has a great potential for the application in nonvolatile resistive switching memory.
Original language | English |
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Article number | 113509 |
Journal | Applied Physics Letters |
Volume | 99 |
Issue number | 11 |
DOIs | |
State | Published - 12 09 2011 |