Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

Tung Ming Pan; Chih Hung Lu

doi:10.1063/1.3638490

Forming-free resistive switching behavior in Nd₂O₃, Dy₂O₃, and Er₂O₃ films fabricated in full room temperature

Tung Ming Pan^*
, Chih Hung Lu

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

82 Scopus citations

Abstract

In this study, we reported the forming-free resistive switching behavior in the Ru/RE₂O₃/TaN (RE Nd, Dy, and Er) memory devices using thin Nd₂O₃, Dy₂O₃, and Er ₂O₃ films fabricated with full room temperature process. The dominant conduction mechanisms of the Ru/RE₂O₃/TaN devices in the low-resistance state and high-resistance state are Ohmic behavior. The Ru/Dy₂O₃/TaN memory device exhibited high resistance ratio, nondestructive readout, reliable data retention, and good endurance. Ru/Dy₂O₃/TaN memory device has a great potential for the application in nonvolatile resistive switching memory.

Original language	English
Article number	113509
Journal	Applied Physics Letters
Volume	99
Issue number	11
DOIs	https://doi.org/10.1063/1.3638490
State	Published - 12 09 2011

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@article{a1d3ef02f0d54d97b97a24e37e158831,

title = "Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature",

abstract = "In this study, we reported the forming-free resistive switching behavior in the Ru/RE2O3/TaN (RE Nd, Dy, and Er) memory devices using thin Nd2O3, Dy2O3, and Er 2O3 films fabricated with full room temperature process. The dominant conduction mechanisms of the Ru/RE2O3/TaN devices in the low-resistance state and high-resistance state are Ohmic behavior. The Ru/Dy2O3/TaN memory device exhibited high resistance ratio, nondestructive readout, reliable data retention, and good endurance. Ru/Dy2O3/TaN memory device has a great potential for the application in nonvolatile resistive switching memory.",

author = "Pan, \{Tung Ming\} and Lu, \{Chih Hung\}",

year = "2011",

month = sep,

day = "12",

doi = "10.1063/1.3638490",

language = "英语",

volume = "99",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Forming-free resistive switching behavior in Nd2O3, Dy2O3, and Er2O3 films fabricated in full room temperature

AU - Pan, Tung Ming

AU - Lu, Chih Hung

PY - 2011/9/12

Y1 - 2011/9/12

N2 - In this study, we reported the forming-free resistive switching behavior in the Ru/RE2O3/TaN (RE Nd, Dy, and Er) memory devices using thin Nd2O3, Dy2O3, and Er 2O3 films fabricated with full room temperature process. The dominant conduction mechanisms of the Ru/RE2O3/TaN devices in the low-resistance state and high-resistance state are Ohmic behavior. The Ru/Dy2O3/TaN memory device exhibited high resistance ratio, nondestructive readout, reliable data retention, and good endurance. Ru/Dy2O3/TaN memory device has a great potential for the application in nonvolatile resistive switching memory.

AB - In this study, we reported the forming-free resistive switching behavior in the Ru/RE2O3/TaN (RE Nd, Dy, and Er) memory devices using thin Nd2O3, Dy2O3, and Er 2O3 films fabricated with full room temperature process. The dominant conduction mechanisms of the Ru/RE2O3/TaN devices in the low-resistance state and high-resistance state are Ohmic behavior. The Ru/Dy2O3/TaN memory device exhibited high resistance ratio, nondestructive readout, reliable data retention, and good endurance. Ru/Dy2O3/TaN memory device has a great potential for the application in nonvolatile resistive switching memory.

UR - https://www.scopus.com/pages/publications/80053203120

U2 - 10.1063/1.3638490

DO - 10.1063/1.3638490

M3 - 文章

AN - SCOPUS:80053203120

SN - 0003-6951

VL - 99

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 11

M1 - 113509

ER -

Forming-free resistive switching behavior in Nd₂O₃, Dy₂O₃, and Er₂O₃ films fabricated in full room temperature

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