Forward current-voltage characteristics of an AlGaInP light-emitting diode

N. C. Chen; Y. K. Yang; W. C. Lien; C. Y. Tseng

doi:10.1063/1.2772530

Forward current-voltage characteristics of an AlGaInP light-emitting diode

N. C. Chen^*, Y. K. Yang, W. C. Lien, C. Y. Tseng

^*Corresponding author for this work

Graduate Institute of Electro-Optical Engineering

Chang Gung University

Research output: Contribution to journal › Journal Article › peer-review

13 Scopus citations

Abstract

This work discusses the temperature-dependent forward current-voltage characteristics of an AlGaInP light-emitting diode. From 300 to 470 K, all curves have the same ideality factor of n=1.58. The temperature-dependent saturation currents are in excellent agreement with the thermal activation behavior over ten decades of current and with an activation energy of Ea =1.405 eV. Based on the discussion of the barrier for forward current flow, n Ea corresponds to the band gap of the active layer. Various mechanisms of current flow for pn junctions and Schottky diodes were examined and verified. Therefore, the n Ea =2.22 eV of the sample corresponds to the band gap of the barriers in the active layer. This value is consistent with the band gap of (Alx Ga1-x) 0.5 In0.5 P for x>0.58.

Original language	English
Article number	043706
Journal	Journal of Applied Physics
Volume	102
Issue number	4
DOIs	https://doi.org/10.1063/1.2772530
State	Published - 2007

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title = "Forward current-voltage characteristics of an AlGaInP light-emitting diode",

abstract = "This work discusses the temperature-dependent forward current-voltage characteristics of an AlGaInP light-emitting diode. From 300 to 470 K, all curves have the same ideality factor of n=1.58. The temperature-dependent saturation currents are in excellent agreement with the thermal activation behavior over ten decades of current and with an activation energy of Ea =1.405 eV. Based on the discussion of the barrier for forward current flow, n Ea corresponds to the band gap of the active layer. Various mechanisms of current flow for pn junctions and Schottky diodes were examined and verified. Therefore, the n Ea =2.22 eV of the sample corresponds to the band gap of the barriers in the active layer. This value is consistent with the band gap of (Alx Ga1-x) 0.5 In0.5 P for x>0.58.",

author = "Chen, {N. C.} and Yang, {Y. K.} and Lien, {W. C.} and Tseng, {C. Y.}",

year = "2007",

doi = "10.1063/1.2772530",

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publisher = "American Institute of Physics",

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T1 - Forward current-voltage characteristics of an AlGaInP light-emitting diode

AU - Chen, N. C.

AU - Yang, Y. K.

AU - Lien, W. C.

AU - Tseng, C. Y.

PY - 2007

Y1 - 2007

N2 - This work discusses the temperature-dependent forward current-voltage characteristics of an AlGaInP light-emitting diode. From 300 to 470 K, all curves have the same ideality factor of n=1.58. The temperature-dependent saturation currents are in excellent agreement with the thermal activation behavior over ten decades of current and with an activation energy of Ea =1.405 eV. Based on the discussion of the barrier for forward current flow, n Ea corresponds to the band gap of the active layer. Various mechanisms of current flow for pn junctions and Schottky diodes were examined and verified. Therefore, the n Ea =2.22 eV of the sample corresponds to the band gap of the barriers in the active layer. This value is consistent with the band gap of (Alx Ga1-x) 0.5 In0.5 P for x>0.58.

AB - This work discusses the temperature-dependent forward current-voltage characteristics of an AlGaInP light-emitting diode. From 300 to 470 K, all curves have the same ideality factor of n=1.58. The temperature-dependent saturation currents are in excellent agreement with the thermal activation behavior over ten decades of current and with an activation energy of Ea =1.405 eV. Based on the discussion of the barrier for forward current flow, n Ea corresponds to the band gap of the active layer. Various mechanisms of current flow for pn junctions and Schottky diodes were examined and verified. Therefore, the n Ea =2.22 eV of the sample corresponds to the band gap of the barriers in the active layer. This value is consistent with the band gap of (Alx Ga1-x) 0.5 In0.5 P for x>0.58.

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DO - 10.1063/1.2772530

M3 - 文章

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VL - 102

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 4

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ER -

Forward current-voltage characteristics of an AlGaInP light-emitting diode

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