TY - JOUR
T1 - Frequency-independent coercive field in Pb(Zr0.52Ti0.48)O3 polycrystalline thin film based on sol-gel synthesis
AU - Prasad Bag, Sankar
AU - Her, Jim Long
AU - Pan, Tung Ming
N1 - Publisher Copyright:
© 2017 Elsevier Ltd
PY - 2017/6/15
Y1 - 2017/6/15
N2 - We investigated the structural and electrical properties of Pb(Zr0.52Ti0.48)O3 thin film using sol-gel spin coating method. The crystalline, structural, compositional, and morphological features of Pb(Zr0.52Ti0.48)O3 film were studied by X-ray diffraction, transmission electron microscopy, energy dispersive X-ray spectroscopy, and atomic force microscopy, respectively. The relationship between the coercive field (Ec) and frequency (f) is a simple power-law, Ec(f) ∝ fβ, where β is the frequency coefficient. The β is zero in the Pb(Zr0.52Ti0.48)O3 capacitor, indicating the coercive field independence of frequency. This result may be attributed to Pb(Zr0.52Ti0.48)O3 thin film possessing the morphotropic phase boundary (MPB) with the coexistence of the tetragonal and rhombohedral phases. The MPB can reduce the domain wall energy to minimize the domain wall movement, and thus decreasing the resistance force acting on the domains.
AB - We investigated the structural and electrical properties of Pb(Zr0.52Ti0.48)O3 thin film using sol-gel spin coating method. The crystalline, structural, compositional, and morphological features of Pb(Zr0.52Ti0.48)O3 film were studied by X-ray diffraction, transmission electron microscopy, energy dispersive X-ray spectroscopy, and atomic force microscopy, respectively. The relationship between the coercive field (Ec) and frequency (f) is a simple power-law, Ec(f) ∝ fβ, where β is the frequency coefficient. The β is zero in the Pb(Zr0.52Ti0.48)O3 capacitor, indicating the coercive field independence of frequency. This result may be attributed to Pb(Zr0.52Ti0.48)O3 thin film possessing the morphotropic phase boundary (MPB) with the coexistence of the tetragonal and rhombohedral phases. The MPB can reduce the domain wall energy to minimize the domain wall movement, and thus decreasing the resistance force acting on the domains.
KW - Lead zirconate titanate
KW - Sol-gel
KW - Thin films
UR - https://www.scopus.com/pages/publications/85015609491
U2 - 10.1016/j.mssp.2017.03.007
DO - 10.1016/j.mssp.2017.03.007
M3 - 文章
AN - SCOPUS:85015609491
SN - 1369-8001
VL - 64
SP - 24
EP - 28
JO - Materials Science in Semiconductor Processing
JF - Materials Science in Semiconductor Processing
ER -