Fully integrated concurrent dual-band low noise amplifier with suspended inductors in SiGe 0.35m BiCMOS technology

Y. T. Lin*, T. Wang, S. S. Lu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

8 Scopus citations

Abstract

A fully integrated concurrent dual-band low noise amplifier with suspended inductors is reported. Wideband input impedance matching and wideband low noise characteristics are achieved by the proposed capacitive feedback technique simultaneously. Measurement results show input return losses of -12.8 and -11.5dB, voltage gains of 14.4 and 14.3dB, and noise figures of 2.5 and 3.0 measured at 2.3 and 4.5GHz, respectively, with an image rejection ratio of 26.1dB and power consumption of 11.9mW.

Original languageEnglish
Pages (from-to)563-565
Number of pages3
JournalElectronics Letters
Volume44
Issue number9
DOIs
StatePublished - 2008
Externally publishedYes

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