GaAs Metal-Semiconductor-Metal Photodetectors (MSM-PD’S) With Aigaas Cap And Buffer Layers

Rong Heng Yuang; Jia Lin Shieh; Ray Ming Lin; Jen Inn Chyi

doi:10.1080/02533839.1995.9677707

GaAs Metal-Semiconductor-Metal Photodetectors (MSM-PD’S) With Aigaas Cap And Buffer Layers

Rong Heng Yuang, Jia Lin Shieh, Ray Ming Lin, Jen Inn Chyi^*

^*Corresponding author for this work

National Central University

Research output: Contribution to journal › Journal Article › peer-review

2 Scopus citations

Abstract

GaAs metal-semiconductor-metal photodetectors with AIGaAs cap and buffer layers have been fabricated and studied. It is shown that the trap-induced effects which result from the GaAs surface trap states can be avoided by adding an AIGaAs cap layer. In addition, we used an AIGaAs buffer layer to reduce the interfacial charge effects between the GaAs substrate and the GaAs absorption layer. The dark currents were less than 1 nA and the low frequency internal gain was dramatically improved. The results also, show that a complete depletion can occur even at biases below 0.5 V.

Original language	English
Pages (from-to)	445-449
Number of pages	5
Journal	Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Volume	18
Issue number	3
DOIs	https://doi.org/10.1080/02533839.1995.9677707
State	Published - 04 1995
Externally published	Yes

Keywords

Buffer layer
Cap layer
Low frequency internal gain
MSM-PD’s

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10.1080/02533839.1995.9677707

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@article{6ea3a081aad745969253bb7efd30c724,

title = "GaAs Metal-Semiconductor-Metal Photodetectors (MSM-PD{\textquoteright}S) With Aigaas Cap And Buffer Layers",

abstract = "GaAs metal-semiconductor-metal photodetectors with AIGaAs cap and buffer layers have been fabricated and studied. It is shown that the trap-induced effects which result from the GaAs surface trap states can be avoided by adding an AIGaAs cap layer. In addition, we used an AIGaAs buffer layer to reduce the interfacial charge effects between the GaAs substrate and the GaAs absorption layer. The dark currents were less than 1 nA and the low frequency internal gain was dramatically improved. The results also, show that a complete depletion can occur even at biases below 0.5 V.",

keywords = "Buffer layer, Cap layer, Low frequency internal gain, MSM-PD{\textquoteright}s",

author = "Yuang, {Rong Heng} and Shieh, {Jia Lin} and Lin, {Ray Ming} and Chyi, {Jen Inn}",

year = "1995",

month = apr,

doi = "10.1080/02533839.1995.9677707",

language = "英语",

volume = "18",

pages = "445--449",

journal = "Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an",

issn = "0253-3839",

publisher = "Taylor and Francis Ltd.",

number = "3",

}

GaAs Metal-Semiconductor-Metal Photodetectors (MSM-PD’S) With Aigaas Cap And Buffer Layers. / Yuang, Rong Heng; Shieh, Jia Lin; Lin, Ray Ming et al.
In: Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an, Vol. 18, No. 3, 04.1995, p. 445-449.

Research output: Contribution to journal › Journal Article › peer-review

TY - JOUR

T1 - GaAs Metal-Semiconductor-Metal Photodetectors (MSM-PD’S) With Aigaas Cap And Buffer Layers

AU - Yuang, Rong Heng

AU - Shieh, Jia Lin

AU - Lin, Ray Ming

AU - Chyi, Jen Inn

PY - 1995/4

Y1 - 1995/4

N2 - GaAs metal-semiconductor-metal photodetectors with AIGaAs cap and buffer layers have been fabricated and studied. It is shown that the trap-induced effects which result from the GaAs surface trap states can be avoided by adding an AIGaAs cap layer. In addition, we used an AIGaAs buffer layer to reduce the interfacial charge effects between the GaAs substrate and the GaAs absorption layer. The dark currents were less than 1 nA and the low frequency internal gain was dramatically improved. The results also, show that a complete depletion can occur even at biases below 0.5 V.

AB - GaAs metal-semiconductor-metal photodetectors with AIGaAs cap and buffer layers have been fabricated and studied. It is shown that the trap-induced effects which result from the GaAs surface trap states can be avoided by adding an AIGaAs cap layer. In addition, we used an AIGaAs buffer layer to reduce the interfacial charge effects between the GaAs substrate and the GaAs absorption layer. The dark currents were less than 1 nA and the low frequency internal gain was dramatically improved. The results also, show that a complete depletion can occur even at biases below 0.5 V.

KW - Buffer layer

KW - Cap layer

KW - Low frequency internal gain

KW - MSM-PD’s

UR - http://www.scopus.com/inward/record.url?scp=0029299262&partnerID=8YFLogxK

U2 - 10.1080/02533839.1995.9677707

DO - 10.1080/02533839.1995.9677707

M3 - 文章

AN - SCOPUS:0029299262

SN - 0253-3839

VL - 18

SP - 445

EP - 449

JO - Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an

JF - Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an

IS - 3

ER -

GaAs Metal-Semiconductor-Metal Photodetectors (MSM-PD’S) With Aigaas Cap And Buffer Layers

Abstract

Keywords

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