GaAs pseudomorphic HEMT with insulating gate films formed by P 2S5/(NH4)2SX sulfurization of recessed GaAs surface

Hsien Chin Chiu*, Yuan Chang Huang, Liann Be Chang, Feng Tso Chien

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

3 Scopus citations

Abstract

Direct sulfurization of GaAs surfaces by treatment with P2S 5/(NH4)2SX was employed to yield gate insulating layers for a depletion-type recessed gate GaAs metal-insulator-semiconductor-like pseudomorphic high-electron mobility transistor (MIS-like pHEMT). The novel P2S5/(NH 4)2SX-treated GaAs provided a lower surface roughness and more Ga-S bonds than the traditional (NH4) 2SX-only sulfurized GaAs; these bonds improved device uniformity and reduced the surface states that are induced by native Ga-O bonds. The diffusion of S atoms from P2S5/(NH4) 2SX sulfurization simultaneously suppressed the drain-to-source current (Ids). The Schottky gate reverse leakage current was suppressed, resulting in a higher breakdown voltage, when this sulfurized GaAs insulator was used. Based on the dc and 1 νs pulse I-V measurement results, P2S5/(NH4) 2SX-treated GaAs MIS-like pHEMTs exhibited identical Ids trends; however, conventional NH4OH-treated pHEMT exhibited an obvious decline in current upon pulse measurement because of the higher surface traps. These results were consistent with the characterization of this insulating film.

Original languageEnglish
Article number035029
JournalSemiconductor Science and Technology
Volume23
Issue number3
DOIs
StatePublished - 01 03 2008

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