GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates

Vin Cent Su; Po Hsun Chen; Yen Pu Chen; Ming Lun Lee; Yao Hong You; Zheng Hung Hung; Ta Cheng Hsu; Yu Yao Lin; Ray Ming Lin; Chieh Hsiung Kuan

doi:10.1364/cleo_at.2016.aw1k.3

GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates

Vin Cent Su, Po Hsun Chen, Yen Pu Chen, Ming Lun Lee, Yao Hong You, Zheng Hung Hung, Ta Cheng Hsu, Yu Yao Lin, Ray Ming Lin, Chieh Hsiung Kuan

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

Original language	English
Title of host publication	2016 Conference on Lasers and Electro-Optics, CLEO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580118
DOIs	https://doi.org/10.1364/cleo_at.2016.aw1k.3
State	Published - 16 12 2016
Event	2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States Duration: 05 06 2016 → 10 06 2016

Publication series

Name	2016 Conference on Lasers and Electro-Optics, CLEO 2016

Conference

Conference	2016 Conference on Lasers and Electro-Optics, CLEO 2016
Country/Territory	United States
City	San Jose
Period	05/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 OSA.

Access to Document

10.1364/cleo_at.2016.aw1k.3

Cite this

Su, V. C., Chen, P. H., Chen, Y. P., Lee, M. L., You, Y. H., Hung, Z. H., Hsu, T. C., Lin, Y. Y., Lin, R. M., & Kuan, C. H. (2016). GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 Article 7787422 (2016 Conference on Lasers and Electro-Optics, CLEO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/cleo_at.2016.aw1k.3

@inproceedings{f77c940878e14ed38e868179a9b771f9,

title = "GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates",

abstract = "By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.",

author = "Su, {Vin Cent} and Chen, {Po Hsun} and Chen, {Yen Pu} and Lee, {Ming Lun} and You, {Yao Hong} and Hung, {Zheng Hung} and Hsu, {Ta Cheng} and Lin, {Yu Yao} and Lin, {Ray Ming} and Kuan, {Chieh Hsiung}",

note = "Publisher Copyright: {\textcopyright} 2016 OSA.; 2016 Conference on Lasers and Electro-Optics, CLEO 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = dec,

day = "16",

doi = "10.1364/cleo_at.2016.aw1k.3",

language = "英语",

series = "2016 Conference on Lasers and Electro-Optics, CLEO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 Conference on Lasers and Electro-Optics, CLEO 2016",

address = "美国",

}

Su, VC, Chen, PH, Chen, YP, Lee, ML, You, YH, Hung, ZH, Hsu, TC, Lin, YY, Lin, RM & Kuan, CH 2016, GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates. in 2016 Conference on Lasers and Electro-Optics, CLEO 2016., 7787422, 2016 Conference on Lasers and Electro-Optics, CLEO 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Conference on Lasers and Electro-Optics, CLEO 2016, San Jose, United States, 05/06/16. https://doi.org/10.1364/cleo_at.2016.aw1k.3

GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates. / Su, Vin Cent; Chen, Po Hsun; Chen, Yen Pu et al.
2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7787422 (2016 Conference on Lasers and Electro-Optics, CLEO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates

AU - Su, Vin Cent

AU - Chen, Po Hsun

AU - Chen, Yen Pu

AU - Lee, Ming Lun

AU - You, Yao Hong

AU - Hung, Zheng Hung

AU - Hsu, Ta Cheng

AU - Lin, Yu Yao

AU - Lin, Ray Ming

AU - Kuan, Chieh Hsiung

PY - 2016/12/16

Y1 - 2016/12/16

N2 - By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

AB - By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

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U2 - 10.1364/cleo_at.2016.aw1k.3

DO - 10.1364/cleo_at.2016.aw1k.3

M3 - 会议稿件

AN - SCOPUS:85010637675

T3 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016

BT - 2016 Conference on Lasers and Electro-Optics, CLEO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Su VC, Chen PH, Chen YP, Lee ML, You YH, Hung ZH et al. GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7787422. (2016 Conference on Lasers and Electro-Optics, CLEO 2016). doi: 10.1364/cleo_at.2016.aw1k.3

GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates

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