GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates

Vin Cent Su; Po Hsun Chen; Yen Pu Chen; Ming Lun Lee; Yao Hong You; Zheng Hung Hung; Ta Cheng Hsu; Yu Yao Lin; Ray Ming Lin; Chieh Hsiung Kuan

doi:10.1364/cleo_at.2016.aw1k.3

GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates

Vin Cent Su
, Po Hsun Chen
, Yen Pu Chen
, Ming Lun Lee
, Yao Hong You
, Zheng Hung Hung
, Ta Cheng Hsu
, Yu Yao Lin
, Ray Ming Lin
, Chieh Hsiung Kuan

Department of Electronic Engineering

National Taiwan University
Kingwave Corporation
Epistar Corporation Taiwan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

Original language	English
Title of host publication	2016 Conference on Lasers and Electro-Optics, CLEO 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781943580118
DOIs	https://doi.org/10.1364/cleo_at.2016.aw1k.3
State	Published - 16 12 2016
Event	2016 Conference on Lasers and Electro-Optics, CLEO 2016 - San Jose, United States Duration: 05 06 2016 → 10 06 2016

Publication series

Name	2016 Conference on Lasers and Electro-Optics, CLEO 2016

Conference

Conference	2016 Conference on Lasers and Electro-Optics, CLEO 2016
Country/Territory	United States
City	San Jose
Period	05/06/16 → 10/06/16

Bibliographical note

Publisher Copyright:
© 2016 OSA.

Access to Document

10.1364/cleo_at.2016.aw1k.3

Cite this

Su, V. C., Chen, P. H., Chen, Y. P., Lee, M. L., You, Y. H., Hung, Z. H., Hsu, T. C., Lin, Y. Y., Lin, R. M., & Kuan, C. H. (2016). GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016 Article 7787422 (2016 Conference on Lasers and Electro-Optics, CLEO 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1364/cleo_at.2016.aw1k.3

@inproceedings{f77c940878e14ed38e868179a9b771f9,

title = "GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates",

abstract = "By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.",

author = "Su, \{Vin Cent\} and Chen, \{Po Hsun\} and Chen, \{Yen Pu\} and Lee, \{Ming Lun\} and You, \{Yao Hong\} and Hung, \{Zheng Hung\} and Hsu, \{Ta Cheng\} and Lin, \{Yu Yao\} and Lin, \{Ray Ming\} and Kuan, \{Chieh Hsiung\}",

note = "Publisher Copyright: {\textcopyright} 2016 OSA.; 2016 Conference on Lasers and Electro-Optics, CLEO 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

month = dec,

day = "16",

doi = "10.1364/cleo\_at.2016.aw1k.3",

language = "英语",

series = "2016 Conference on Lasers and Electro-Optics, CLEO 2016",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

booktitle = "2016 Conference on Lasers and Electro-Optics, CLEO 2016",

address = "美国",

}

Su, VC, Chen, PH, Chen, YP, Lee, ML, You, YH, Hung, ZH, Hsu, TC, Lin, YY, Lin, RM & Kuan, CH 2016, GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates. in 2016 Conference on Lasers and Electro-Optics, CLEO 2016., 7787422, 2016 Conference on Lasers and Electro-Optics, CLEO 2016, Institute of Electrical and Electronics Engineers Inc., 2016 Conference on Lasers and Electro-Optics, CLEO 2016, San Jose, United States, 05/06/16. https://doi.org/10.1364/cleo_at.2016.aw1k.3

GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates. / Su, Vin Cent; Chen, Po Hsun; Chen, Yen Pu et al.
2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7787422 (2016 Conference on Lasers and Electro-Optics, CLEO 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates

AU - Su, Vin Cent

AU - Chen, Po Hsun

AU - Chen, Yen Pu

AU - Lee, Ming Lun

AU - You, Yao Hong

AU - Hung, Zheng Hung

AU - Hsu, Ta Cheng

AU - Lin, Yu Yao

AU - Lin, Ray Ming

AU - Kuan, Chieh Hsiung

PY - 2016/12/16

Y1 - 2016/12/16

N2 - By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

AB - By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

UR - https://www.scopus.com/pages/publications/85010637675

U2 - 10.1364/cleo_at.2016.aw1k.3

DO - 10.1364/cleo_at.2016.aw1k.3

M3 - 会议稿件

AN - SCOPUS:85010637675

T3 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016

BT - 2016 Conference on Lasers and Electro-Optics, CLEO 2016

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2016 Conference on Lasers and Electro-Optics, CLEO 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

Su VC, Chen PH, Chen YP, Lee ML, You YH, Hung ZH et al. GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates. In 2016 Conference on Lasers and Electro-Optics, CLEO 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7787422. (2016 Conference on Lasers and Electro-Optics, CLEO 2016). doi: 10.1364/cleo_at.2016.aw1k.3

GaN-based stress-induced bandgap widening with various arrangements of patterned sapphire substrates

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