GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

Vin Cent Su; Po Hsun Chen; Yen Pu Chen; Ming Lun Lee; Yao Hong You; Zheng Hung Hung; Ta Cheng Hsu; Yu Yao Lin; Ray Ming Lin; Chieh Hsiung Kuan

GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

Vin Cent Su, Po Hsun Chen, Yen Pu Chen, Ming Lun Lee, Yao Hong You, Zheng Hung Hung, Ta Cheng Hsu, Yu Yao Lin, Ray Ming Lin, Chieh Hsiung Kuan^*

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Conference article › peer-review

Abstract

By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

Original language	English
Article number	AW1K.3
Journal	Optics InfoBase Conference Papers
State	Published - 2016
Event	CLEO: Applications and Technology, CLEO AT 2016 - San Jose, United States Duration: 05 06 2016 → 10 06 2016

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© OSA 2016.

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title = "GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates",

abstract = "By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.",

author = "Su, {Vin Cent} and Chen, {Po Hsun} and Chen, {Yen Pu} and Lee, {Ming Lun} and You, {Yao Hong} and Hung, {Zheng Hung} and Hsu, {Ta Cheng} and Lin, {Yu Yao} and Lin, {Ray Ming} and Kuan, {Chieh Hsiung}",

note = "Publisher Copyright: {\textcopyright} OSA 2016.; CLEO: Applications and Technology, CLEO AT 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

language = "英语",

journal = "Optics InfoBase Conference Papers",

issn = "2162-2701",

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TY - JOUR

T1 - GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

AU - Su, Vin Cent

AU - Chen, Po Hsun

AU - Chen, Yen Pu

AU - Lee, Ming Lun

AU - You, Yao Hong

AU - Hung, Zheng Hung

AU - Hsu, Ta Cheng

AU - Lin, Yu Yao

AU - Lin, Ray Ming

AU - Kuan, Chieh Hsiung

PY - 2016

Y1 - 2016

N2 - By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

AB - By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

UR - http://www.scopus.com/inward/record.url?scp=85136353414&partnerID=8YFLogxK

M3 - 会议文章

AN - SCOPUS:85136353414

SN - 2162-2701

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

M1 - AW1K.3

T2 - CLEO: Applications and Technology, CLEO AT 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

Abstract

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