GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

Vin Cent Su; Po Hsun Chen; Yen Pu Chen; Ming Lun Lee; Yao Hong You; Zheng Hung Hung; Ta Cheng Hsu; Yu Yao Lin; Ray Ming Lin; Chieh Hsiung Kuan

GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

Vin Cent Su
, Po Hsun Chen
, Yen Pu Chen
, Ming Lun Lee
, Yao Hong You
, Zheng Hung Hung
, Ta Cheng Hsu
, Yu Yao Lin
, Ray Ming Lin
, Chieh Hsiung Kuan^*

^*Corresponding author for this work

Department of Electronic Engineering

National Taiwan University
Kingwave Corporation
Epistar Corporation Taiwan

Research output: Contribution to journal › Conference article › peer-review

Abstract

By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

Original language	English
Article number	AW1K.3
Journal	Optics InfoBase Conference Papers
State	Published - 2016
Event	CLEO: Applications and Technology, CLEO AT 2016 - San Jose, United States Duration: 05 06 2016 → 10 06 2016

Bibliographical note

Publisher Copyright:
© OSA 2016.

Cite this

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title = "GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates",

abstract = "By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.",

author = "Su, \{Vin Cent\} and Chen, \{Po Hsun\} and Chen, \{Yen Pu\} and Lee, \{Ming Lun\} and You, \{Yao Hong\} and Hung, \{Zheng Hung\} and Hsu, \{Ta Cheng\} and Lin, \{Yu Yao\} and Lin, \{Ray Ming\} and Kuan, \{Chieh Hsiung\}",

note = "Publisher Copyright: {\textcopyright} OSA 2016.; CLEO: Applications and Technology, CLEO AT 2016 ; Conference date: 05-06-2016 Through 10-06-2016",

year = "2016",

language = "英语",

journal = "Optics InfoBase Conference Papers",

issn = "2162-2701",

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TY - JOUR

T1 - GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

AU - Su, Vin Cent

AU - Chen, Po Hsun

AU - Chen, Yen Pu

AU - Lee, Ming Lun

AU - You, Yao Hong

AU - Hung, Zheng Hung

AU - Hsu, Ta Cheng

AU - Lin, Yu Yao

AU - Lin, Ray Ming

AU - Kuan, Chieh Hsiung

PY - 2016

Y1 - 2016

N2 - By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

AB - By varying the arrangements of patterned sapphire substrates, the stress-induced bandgap widening of GaN-based epitaxial layers can be acquired. Photoluminescence and Raman results demonstrate a linear relationship of blue-shift with the increase of residual stress.

UR - https://www.scopus.com/pages/publications/85136353414

M3 - 会议文章

AN - SCOPUS:85136353414

SN - 2162-2701

JO - Optics InfoBase Conference Papers

JF - Optics InfoBase Conference Papers

M1 - AW1K.3

T2 - CLEO: Applications and Technology, CLEO AT 2016

Y2 - 5 June 2016 through 10 June 2016

ER -

GaN-Based Stress-Induced Bandgap Widening with Various Arrangements of Patterned Sapphire Substrates

Abstract

Bibliographical note

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