GaN electronics for high power, high temperature applications

S. J. Pearton; F. Ren; A. P. Zhang; G. Dang; X. A. Cao; K. P. Lee; H. Cho; B. P. Gila; J. W. Johnson; C. Monier; C. R. Abernathy; J. Han; A. G. Baca; J. I. Chyi; C. M. Lee; T. E. Nee; C. C. Chuo; S. N.G. Chu

doi:10.1016/S0921-5107(00)00767-4

GaN electronics for high power, high temperature applications

S. J. Pearton^*, F. Ren, A. P. Zhang, G. Dang, X. A. Cao, K. P. Lee, H. Cho, B. P. Gila, J. W. Johnson, C. Monier, C. R. Abernathy, J. Han, A. G. Baca, J. I. Chyi, C. M. Lee, T. E. Nee, C. C. Chuo, S. N.G. Chu

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

103 Scopus citations

Abstract

The progress in the fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN HBT and GaN MOSFET is reviewed. Improvements in epitaxial layer quality are studied. The advances in fabrication techniques that led to the improvement of device performance are discussed.

Original language	English
Pages (from-to)	227-231
Number of pages	5
Journal	Materials Science and Engineering: B
Volume	82
Issue number	1-3
DOIs	https://doi.org/10.1016/S0921-5107(00)00767-4
State	Published - 22 05 2001
Externally published	Yes

Keywords

Bipolar transistors
GaN
MOSFETs
Rectifiers

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10.1016/S0921-5107(00)00767-4

Cite this

Pearton, S. J., Ren, F., Zhang, A. P., Dang, G., Cao, X. A., Lee, K. P., Cho, H., Gila, B. P., Johnson, J. W., Monier, C., Abernathy, C. R., Han, J., Baca, A. G., Chyi, J. I., Lee, C. M., Nee, T. E., Chuo, C. C., & Chu, S. N. G. (2001). GaN electronics for high power, high temperature applications. Materials Science and Engineering: B, 82(1-3), 227-231. https://doi.org/10.1016/S0921-5107(00)00767-4

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title = "GaN electronics for high power, high temperature applications",

abstract = "The progress in the fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN HBT and GaN MOSFET is reviewed. Improvements in epitaxial layer quality are studied. The advances in fabrication techniques that led to the improvement of device performance are discussed.",

keywords = "Bipolar transistors, GaN, MOSFETs, Rectifiers",

author = "Pearton, \{S. J.\} and F. Ren and Zhang, \{A. P.\} and G. Dang and Cao, \{X. A.\} and Lee, \{K. P.\} and H. Cho and Gila, \{B. P.\} and Johnson, \{J. W.\} and C. Monier and Abernathy, \{C. R.\} and J. Han and Baca, \{A. G.\} and Chyi, \{J. I.\} and Lee, \{C. M.\} and Nee, \{T. E.\} and Chuo, \{C. C.\} and Chu, \{S. N.G.\}",

year = "2001",

month = may,

day = "22",

doi = "10.1016/S0921-5107(00)00767-4",

language = "英语",

volume = "82",

pages = "227--231",

journal = "Materials Science and Engineering: B",

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TY - JOUR

T1 - GaN electronics for high power, high temperature applications

AU - Pearton, S. J.

AU - Ren, F.

AU - Zhang, A. P.

AU - Dang, G.

AU - Cao, X. A.

AU - Lee, K. P.

AU - Cho, H.

AU - Gila, B. P.

AU - Johnson, J. W.

AU - Monier, C.

AU - Abernathy, C. R.

AU - Han, J.

AU - Baca, A. G.

AU - Chyi, J. I.

AU - Lee, C. M.

AU - Nee, T. E.

AU - Chuo, C. C.

AU - Chu, S. N.G.

PY - 2001/5/22

Y1 - 2001/5/22

N2 - The progress in the fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN HBT and GaN MOSFET is reviewed. Improvements in epitaxial layer quality are studied. The advances in fabrication techniques that led to the improvement of device performance are discussed.

AB - The progress in the fabrication of high voltage GaN and AlGaN rectifiers, GaN/AlGaN HBT and GaN MOSFET is reviewed. Improvements in epitaxial layer quality are studied. The advances in fabrication techniques that led to the improvement of device performance are discussed.

KW - Bipolar transistors

KW - GaN

KW - MOSFETs

KW - Rectifiers

UR - https://www.scopus.com/pages/publications/0035933013

U2 - 10.1016/S0921-5107(00)00767-4

DO - 10.1016/S0921-5107(00)00767-4

M3 - 文章

AN - SCOPUS:0035933013

SN - 0921-5107

VL - 82

SP - 227

EP - 231

JO - Materials Science and Engineering: B

JF - Materials Science and Engineering: B

IS - 1-3

ER -

GaN electronics for high power, high temperature applications

Abstract

Keywords

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