GaN electronics for high power, high temperature applications

S. J. Pearton; F. Ren; A. P. Zhang; G. Dang; X. A. Cao; H. Cho; C. R. Abemathy; J. Han; A. G. Baca; C. Monier; P. Chang; R. J. Shul; L. Zhang; J. M. Van Hove; P. P. Chow; J. J. Klaassen; C. J. Polley; A. M. Wowchack; D. J. King; S. N.G. Chu; M. Hong; A. Y. Polyakov; N. B. Smirnov; A. V. Govorkov; J. I. Chyi; C. M. Lee; T. E. Nee; C. C. Chuo; G. C. Chi; J. M. Redwing

GaN electronics for high power, high temperature applications

S. J. Pearton^*, F. Ren, A. P. Zhang, G. Dang, X. A. Cao, H. Cho, C. R. Abemathy, J. Han, A. G. Baca, C. Monier, P. Chang, R. J. Shul, L. Zhang, J. M. Van Hove, P. P. Chow, J. J. Klaassen, C. J. Polley, A. M. Wowchack, D. J. King, S. N.G. ChuM. Hong, A. Y. Polyakov, N. B. Smirnov, A. V. Govorkov, J. I. Chyi, C. M. Lee, T. E. Nee, C. C. Chuo, G. C. Chi, J. M. Redwing

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

7 Scopus citations

Abstract

Extremely efficient light emission is achieved in heteroepitaxial layers of GaN based materials. A photonic device fabricated on GaN regions provides better optical output and reliability. The advantages of AlGaInN system are wide bandgaps, good transport properties, and availability of heterostructures. Packaged switches made from AlGaN can operate at temperatures exceeding 250° centigrade, thereby reducing system complexity. The base resistance of GaN heterojunction bipolar transistors (HBTs) is much lower due to high doping level.

Original language	English
Pages (from-to)	34-39
Number of pages	6
Journal	Electrochemical Society Interface
Volume	9
Issue number	2
State	Published - 06 2000
Externally published	Yes

Cite this

Pearton, S. J., Ren, F., Zhang, A. P., Dang, G., Cao, X. A., Cho, H., Abemathy, C. R., Han, J., Baca, A. G., Monier, C., Chang, P., Shul, R. J., Zhang, L., Van Hove, J. M., Chow, P. P., Klaassen, J. J., Polley, C. J., Wowchack, A. M., King, D. J., ... Redwing, J. M. (2000). GaN electronics for high power, high temperature applications. Electrochemical Society Interface, 9(2), 34-39.

@article{49b52dc199cf4fc7be163a6c82d26137,

title = "GaN electronics for high power, high temperature applications",

abstract = "Extremely efficient light emission is achieved in heteroepitaxial layers of GaN based materials. A photonic device fabricated on GaN regions provides better optical output and reliability. The advantages of AlGaInN system are wide bandgaps, good transport properties, and availability of heterostructures. Packaged switches made from AlGaN can operate at temperatures exceeding 250° centigrade, thereby reducing system complexity. The base resistance of GaN heterojunction bipolar transistors (HBTs) is much lower due to high doping level.",

author = "Pearton, {S. J.} and F. Ren and Zhang, {A. P.} and G. Dang and Cao, {X. A.} and H. Cho and Abemathy, {C. R.} and J. Han and Baca, {A. G.} and C. Monier and P. Chang and Shul, {R. J.} and L. Zhang and {Van Hove}, {J. M.} and Chow, {P. P.} and Klaassen, {J. J.} and Polley, {C. J.} and Wowchack, {A. M.} and King, {D. J.} and Chu, {S. N.G.} and M. Hong and Polyakov, {A. Y.} and Smirnov, {N. B.} and Govorkov, {A. V.} and Chyi, {J. I.} and Lee, {C. M.} and Nee, {T. E.} and Chuo, {C. C.} and Chi, {G. C.} and Redwing, {J. M.}",

year = "2000",

month = jun,

language = "英语",

volume = "9",

pages = "34--39",

journal = "Electrochemical Society Interface",

issn = "1064-8208",

publisher = "Institute of Physics Publishing",

number = "2",

}

Pearton, SJ, Ren, F, Zhang, AP, Dang, G, Cao, XA, Cho, H, Abemathy, CR, Han, J, Baca, AG, Monier, C, Chang, P, Shul, RJ, Zhang, L, Van Hove, JM, Chow, PP, Klaassen, JJ, Polley, CJ, Wowchack, AM, King, DJ, Chu, SNG, Hong, M, Polyakov, AY, Smirnov, NB, Govorkov, AV, Chyi, JI, Lee, CM, Nee, TE, Chuo, CC, Chi, GC & Redwing, JM 2000, 'GaN electronics for high power, high temperature applications', Electrochemical Society Interface, vol. 9, no. 2, pp. 34-39.

TY - JOUR

T1 - GaN electronics for high power, high temperature applications

AU - Pearton, S. J.

AU - Ren, F.

AU - Zhang, A. P.

AU - Dang, G.

AU - Cao, X. A.

AU - Cho, H.

AU - Abemathy, C. R.

AU - Han, J.

AU - Baca, A. G.

AU - Monier, C.

AU - Chang, P.

AU - Shul, R. J.

AU - Zhang, L.

AU - Van Hove, J. M.

AU - Chow, P. P.

AU - Klaassen, J. J.

AU - Polley, C. J.

AU - Wowchack, A. M.

AU - King, D. J.

AU - Chu, S. N.G.

AU - Hong, M.

AU - Polyakov, A. Y.

AU - Smirnov, N. B.

AU - Govorkov, A. V.

AU - Chyi, J. I.

AU - Lee, C. M.

AU - Nee, T. E.

AU - Chuo, C. C.

AU - Chi, G. C.

AU - Redwing, J. M.

PY - 2000/6

Y1 - 2000/6

N2 - Extremely efficient light emission is achieved in heteroepitaxial layers of GaN based materials. A photonic device fabricated on GaN regions provides better optical output and reliability. The advantages of AlGaInN system are wide bandgaps, good transport properties, and availability of heterostructures. Packaged switches made from AlGaN can operate at temperatures exceeding 250° centigrade, thereby reducing system complexity. The base resistance of GaN heterojunction bipolar transistors (HBTs) is much lower due to high doping level.

AB - Extremely efficient light emission is achieved in heteroepitaxial layers of GaN based materials. A photonic device fabricated on GaN regions provides better optical output and reliability. The advantages of AlGaInN system are wide bandgaps, good transport properties, and availability of heterostructures. Packaged switches made from AlGaN can operate at temperatures exceeding 250° centigrade, thereby reducing system complexity. The base resistance of GaN heterojunction bipolar transistors (HBTs) is much lower due to high doping level.

UR - http://www.scopus.com/inward/record.url?scp=6744242015&partnerID=8YFLogxK

M3 - 文章

AN - SCOPUS:6744242015

SN - 1064-8208

VL - 9

SP - 34

EP - 39

JO - Electrochemical Society Interface

JF - Electrochemical Society Interface

IS - 2

ER -

GaN electronics for high power, high temperature applications

Abstract

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