GaN grown in silicon (111) substrates of transferred surface morphology

Research output: Contribution to conference › Proceeding

Original language	American English
State	Published - 2009
Event	2009 International Electron Devices and Materials Symposia - Taoyuan, Taiwan Duration: 19 11 2009 → 20 11 2009

Conference	2009 International Electron Devices and Materials Symposia
Period	19/11/09 → 20/11/09

Cite this

@conference{f2696bf400f04ee39489801d5b5b1572,

title = "GaN grown in silicon (111) substrates of transferred surface morphology",

author = "Nai-Chuan Chen and W.C. Lien and Y.K. Yang and Y.S. Wang and J.F. Chen and T.Y. Chen and P.H. Ho",

year = "2009",

language = "American English",

note = "2009 International Electron Devices and Materials Symposia ; Conference date: 19-11-2009 Through 20-11-2009",

}