GaN lattice matched ZnO/Pr2O3 film as gate dielectric oxide layer for AlGaN/GaN HEMT

Che Kai Lin; Ming Yang Chen; Hsiang Chun Wang; Chih Wei Yang; Chao Wei Chiu; Hsien Chin Chiu; Kuang Po Hsueh

doi:10.1109/EDSSC.2009.5394231

GaN lattice matched ZnO/Pr₂O₃ film as gate dielectric oxide layer for AlGaN/GaN HEMT

Che Kai Lin^*, Ming Yang Chen, Hsiang Chun Wang, Chih Wei Yang, Chao Wei Chiu, Hsien Chin Chiu, Kuang Po Hsueh

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, we perform AlGaN/GaN MOS-HEMT by using ZnO/Pr ₂O₃ as gate dielectric. After 600°C annealing, the XRD analysis shows ZnO thin films with highly crystalline characteristics, which exhibit a lattice constant (a=3.2498, c=5.2066) matched to GaN (a=3.1890, c=5.1855). The gate leakage current can be improved significantly by inserting ZnO/Pr₂O₃ dielectric layer; meanwhile, ZnO/Pr ₂O₃ MOS-HEMT shows superior breakdown voltage performance toward ZnO MOS-HEMT and conventional Ni/Au HEMT. From these results, ZnO/Pr ₂O₃ dielectric is promising for low leakage current of AlGaN/GaN based MOS-HEMT.

Original language	English
Title of host publication	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Pages	408-411
Number of pages	4
DOIs	https://doi.org/10.1109/EDSSC.2009.5394231
State	Published - 2009
Event	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 - Xi'an, China Duration: 25 12 2009 → 27 12 2009

Publication series

Name	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

Conference

Conference	2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009
Country/Territory	China
City	Xi'an
Period	25/12/09 → 27/12/09

Access to Document

10.1109/EDSSC.2009.5394231

Cite this

Lin, C. K., Chen, M. Y., Wang, H. C., Yang, C. W., Chiu, C. W., Chiu, H. C., & Hsueh, K. P. (2009). GaN lattice matched ZnO/Pr₂O₃ film as gate dielectric oxide layer for AlGaN/GaN HEMT. In 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 (pp. 408-411). Article 5394231 (2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009). https://doi.org/10.1109/EDSSC.2009.5394231

@inproceedings{3943795eea6a4c7c846a59916b7b4364,

title = "GaN lattice matched ZnO/Pr2O3 film as gate dielectric oxide layer for AlGaN/GaN HEMT",

abstract = "In this work, we perform AlGaN/GaN MOS-HEMT by using ZnO/Pr 2O3 as gate dielectric. After 600°C annealing, the XRD analysis shows ZnO thin films with highly crystalline characteristics, which exhibit a lattice constant (a=3.2498, c=5.2066) matched to GaN (a=3.1890, c=5.1855). The gate leakage current can be improved significantly by inserting ZnO/Pr2O3 dielectric layer; meanwhile, ZnO/Pr 2O3 MOS-HEMT shows superior breakdown voltage performance toward ZnO MOS-HEMT and conventional Ni/Au HEMT. From these results, ZnO/Pr 2O3 dielectric is promising for low leakage current of AlGaN/GaN based MOS-HEMT.",

author = "Lin, {Che Kai} and Chen, {Ming Yang} and Wang, {Hsiang Chun} and Yang, {Chih Wei} and Chiu, {Chao Wei} and Chiu, {Hsien Chin} and Hsueh, {Kuang Po}",

year = "2009",

doi = "10.1109/EDSSC.2009.5394231",

language = "英语",

isbn = "9781424442980",

series = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009",

pages = "408--411",

booktitle = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009",

note = "2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009 ; Conference date: 25-12-2009 Through 27-12-2009",

}

Lin, CK, Chen, MY, Wang, HC, Yang, CW, Chiu, CW, Chiu, HC & Hsueh, KP 2009, GaN lattice matched ZnO/Pr₂O₃ film as gate dielectric oxide layer for AlGaN/GaN HEMT. in 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009., 5394231, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, pp. 408-411, 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009, Xi'an, China, 25/12/09. https://doi.org/10.1109/EDSSC.2009.5394231

GaN lattice matched ZnO/Pr₂O₃ film as gate dielectric oxide layer for AlGaN/GaN HEMT. / Lin, Che Kai; Chen, Ming Yang; Wang, Hsiang Chun et al.
2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009. 2009. p. 408-411 5394231 (2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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T1 - GaN lattice matched ZnO/Pr2O3 film as gate dielectric oxide layer for AlGaN/GaN HEMT

AU - Lin, Che Kai

AU - Chen, Ming Yang

AU - Wang, Hsiang Chun

AU - Yang, Chih Wei

AU - Chiu, Chao Wei

AU - Chiu, Hsien Chin

AU - Hsueh, Kuang Po

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N2 - In this work, we perform AlGaN/GaN MOS-HEMT by using ZnO/Pr 2O3 as gate dielectric. After 600°C annealing, the XRD analysis shows ZnO thin films with highly crystalline characteristics, which exhibit a lattice constant (a=3.2498, c=5.2066) matched to GaN (a=3.1890, c=5.1855). The gate leakage current can be improved significantly by inserting ZnO/Pr2O3 dielectric layer; meanwhile, ZnO/Pr 2O3 MOS-HEMT shows superior breakdown voltage performance toward ZnO MOS-HEMT and conventional Ni/Au HEMT. From these results, ZnO/Pr 2O3 dielectric is promising for low leakage current of AlGaN/GaN based MOS-HEMT.

AB - In this work, we perform AlGaN/GaN MOS-HEMT by using ZnO/Pr 2O3 as gate dielectric. After 600°C annealing, the XRD analysis shows ZnO thin films with highly crystalline characteristics, which exhibit a lattice constant (a=3.2498, c=5.2066) matched to GaN (a=3.1890, c=5.1855). The gate leakage current can be improved significantly by inserting ZnO/Pr2O3 dielectric layer; meanwhile, ZnO/Pr 2O3 MOS-HEMT shows superior breakdown voltage performance toward ZnO MOS-HEMT and conventional Ni/Au HEMT. From these results, ZnO/Pr 2O3 dielectric is promising for low leakage current of AlGaN/GaN based MOS-HEMT.

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BT - 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009

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Lin CK, Chen MY, Wang HC, Yang CW, Chiu CW, Chiu HC et al. GaN lattice matched ZnO/Pr₂O₃ film as gate dielectric oxide layer for AlGaN/GaN HEMT. In 2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009. 2009. p. 408-411. 5394231. (2009 IEEE International Conference on Electron Devices and Solid-State Circuits, EDSSC 2009). doi: 10.1109/EDSSC.2009.5394231