GaN on Si RF Devices and MMICs-Pivotal Driving Force of 5G Communication Micro/Macro Cells

Hsiang Chun Wang; Chao Wei Chiu; Hsien Chin Chiu

doi:10.1109/IEEE-IWS.2019.8804091

GaN on Si RF Devices and MMICs-Pivotal Driving Force of 5G Communication Micro/Macro Cells

Hsiang Chun Wang, Chao Wei Chiu, Hsien Chin Chiu

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

5G communication and its related wireless technology will bring tremendous challenges for various base station and mobile handset manufacturers due to lower latency, high data rates and capacity requirements. In addition, the integration complexity of millimeter wave integrated circuit will be a pivotal parameter to enlarge and fasten the implementation of 5G MIMO at millimeter-wave bands. GaN on Si technology provides a highly potential for this goal because its high integration ability with low-cost and large-diameter Si substrates. The volume of GaN on Si technology also provides huge capability to high volume production challenges for 5G sub-6 GHz and mmW bands. The GaN on Si device and mmic development will be introduced in this study.

Original language	English
Title of host publication	2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781728107165
DOIs	https://doi.org/10.1109/IEEE-IWS.2019.8804091
State	Published - 05 2019
Event	2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Guangzhou, China Duration: 19 05 2019 → 22 05 2019

Publication series

Name	2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

Conference

Conference	2019 IEEE MTT-S International Wireless Symposium, IWS 2019
Country/Territory	China
City	Guangzhou
Period	19/05/19 → 22/05/19

Bibliographical note

Publisher Copyright:
© 2019 IEEE.

Access to Document

10.1109/IEEE-IWS.2019.8804091

Cite this

Wang, H. C., Chiu, C. W., & Chiu, H. C. (2019). GaN on Si RF Devices and MMICs-Pivotal Driving Force of 5G Communication Micro/Macro Cells. In 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings Article 8804091 (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IEEE-IWS.2019.8804091

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title = "GaN on Si RF Devices and MMICs-Pivotal Driving Force of 5G Communication Micro/Macro Cells",

abstract = "5G communication and its related wireless technology will bring tremendous challenges for various base station and mobile handset manufacturers due to lower latency, high data rates and capacity requirements. In addition, the integration complexity of millimeter wave integrated circuit will be a pivotal parameter to enlarge and fasten the implementation of 5G MIMO at millimeter-wave bands. GaN on Si technology provides a highly potential for this goal because its high integration ability with low-cost and large-diameter Si substrates. The volume of GaN on Si technology also provides huge capability to high volume production challenges for 5G sub-6 GHz and mmW bands. The GaN on Si device and mmic development will be introduced in this study.",

author = "Wang, \{Hsiang Chun\} and Chiu, \{Chao Wei\} and Chiu, \{Hsien Chin\}",

note = "Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 ; Conference date: 19-05-2019 Through 22-05-2019",

year = "2019",

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doi = "10.1109/IEEE-IWS.2019.8804091",

language = "英语",

series = "2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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Wang, HC, Chiu, CW & Chiu, HC 2019, GaN on Si RF Devices and MMICs-Pivotal Driving Force of 5G Communication Micro/Macro Cells. in 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings., 8804091, 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE MTT-S International Wireless Symposium, IWS 2019, Guangzhou, China, 19/05/19. https://doi.org/10.1109/IEEE-IWS.2019.8804091

GaN on Si RF Devices and MMICs-Pivotal Driving Force of 5G Communication Micro/Macro Cells. / Wang, Hsiang Chun; Chiu, Chao Wei; Chiu, Hsien Chin.
2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2019. 8804091 (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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PY - 2019/5

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N2 - 5G communication and its related wireless technology will bring tremendous challenges for various base station and mobile handset manufacturers due to lower latency, high data rates and capacity requirements. In addition, the integration complexity of millimeter wave integrated circuit will be a pivotal parameter to enlarge and fasten the implementation of 5G MIMO at millimeter-wave bands. GaN on Si technology provides a highly potential for this goal because its high integration ability with low-cost and large-diameter Si substrates. The volume of GaN on Si technology also provides huge capability to high volume production challenges for 5G sub-6 GHz and mmW bands. The GaN on Si device and mmic development will be introduced in this study.

AB - 5G communication and its related wireless technology will bring tremendous challenges for various base station and mobile handset manufacturers due to lower latency, high data rates and capacity requirements. In addition, the integration complexity of millimeter wave integrated circuit will be a pivotal parameter to enlarge and fasten the implementation of 5G MIMO at millimeter-wave bands. GaN on Si technology provides a highly potential for this goal because its high integration ability with low-cost and large-diameter Si substrates. The volume of GaN on Si technology also provides huge capability to high volume production challenges for 5G sub-6 GHz and mmW bands. The GaN on Si device and mmic development will be introduced in this study.

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M3 - 会议稿件

AN - SCOPUS:85071727120

T3 - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

BT - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2019 IEEE MTT-S International Wireless Symposium, IWS 2019

Y2 - 19 May 2019 through 22 May 2019

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Wang HC, Chiu CW, Chiu HC. GaN on Si RF Devices and MMICs-Pivotal Driving Force of 5G Communication Micro/Macro Cells. In 2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2019. 8804091. (2019 IEEE MTT-S International Wireless Symposium, IWS 2019 - Proceedings). doi: 10.1109/IEEE-IWS.2019.8804091

GaN on Si RF Devices and MMICs-Pivotal Driving Force of 5G Communication Micro/Macro Cells

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