GaN thin film based light addressable potentiometric sensor for pH sensing application

Atanu Das; Anirban Das; Liann Be Chang; Chao Sung Lai; Ray Ming Lin; Fu Chuan Chu; Yen Heng Lin; Lee Chow; Ming Jer Jeng

doi:10.7567/APEX.6.036601

GaN thin film based light addressable potentiometric sensor for pH sensing application

Atanu Das, Anirban Das, Liann Be Chang^*, Chao Sung Lai, Ray Ming Lin, Fu Chuan Chu, Yen Heng Lin, Lee Chow, Ming Jer Jeng

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

42 Scopus citations

Abstract

Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct light emission and excellent chemical stability. In this study, a GaN-based light addressable potentiometric sensor (LAPS) with Si ₃N₄ ~50nm as a sensing membrane is fabricated. By modulated optical excitation from an ultraviolet 365nm light-emitting diode, the photoresponse characteristic and related pH sensitivity of the fabricated GaNbased LAPS is investigated. A Nernstian-like pH response with pH sensitivity of 52.29 mV/pH and linearity of 99.13% is obtained. These results of the GaN-based LAPS show great promise and it could be used as a single chemical sensor or integrated optoelectronic chemical sensor array for biomedical research with high spatial resolution.

Original language	English
Article number	036601
Journal	Applied Physics Express
Volume	6
Issue number	3
DOIs	https://doi.org/10.7567/APEX.6.036601
State	Published - 03 2013

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title = "GaN thin film based light addressable potentiometric sensor for pH sensing application",

abstract = "Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct light emission and excellent chemical stability. In this study, a GaN-based light addressable potentiometric sensor (LAPS) with Si 3N4 ~50nm as a sensing membrane is fabricated. By modulated optical excitation from an ultraviolet 365nm light-emitting diode, the photoresponse characteristic and related pH sensitivity of the fabricated GaNbased LAPS is investigated. A Nernstian-like pH response with pH sensitivity of 52.29 mV/pH and linearity of 99.13% is obtained. These results of the GaN-based LAPS show great promise and it could be used as a single chemical sensor or integrated optoelectronic chemical sensor array for biomedical research with high spatial resolution.",

author = "Atanu Das and Anirban Das and Chang, {Liann Be} and Lai, {Chao Sung} and Lin, {Ray Ming} and Chu, {Fu Chuan} and Lin, {Yen Heng} and Lee Chow and Jeng, {Ming Jer}",

year = "2013",

month = mar,

doi = "10.7567/APEX.6.036601",

language = "英语",

volume = "6",

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TY - JOUR

T1 - GaN thin film based light addressable potentiometric sensor for pH sensing application

AU - Das, Atanu

AU - Das, Anirban

AU - Chang, Liann Be

AU - Lai, Chao Sung

AU - Lin, Ray Ming

AU - Chu, Fu Chuan

AU - Lin, Yen Heng

AU - Chow, Lee

AU - Jeng, Ming Jer

PY - 2013/3

Y1 - 2013/3

N2 - Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct light emission and excellent chemical stability. In this study, a GaN-based light addressable potentiometric sensor (LAPS) with Si 3N4 ~50nm as a sensing membrane is fabricated. By modulated optical excitation from an ultraviolet 365nm light-emitting diode, the photoresponse characteristic and related pH sensitivity of the fabricated GaNbased LAPS is investigated. A Nernstian-like pH response with pH sensitivity of 52.29 mV/pH and linearity of 99.13% is obtained. These results of the GaN-based LAPS show great promise and it could be used as a single chemical sensor or integrated optoelectronic chemical sensor array for biomedical research with high spatial resolution.

AB - Gallium nitride (GaN) is a material with remarkable properties, including wide band gap, direct light emission and excellent chemical stability. In this study, a GaN-based light addressable potentiometric sensor (LAPS) with Si 3N4 ~50nm as a sensing membrane is fabricated. By modulated optical excitation from an ultraviolet 365nm light-emitting diode, the photoresponse characteristic and related pH sensitivity of the fabricated GaNbased LAPS is investigated. A Nernstian-like pH response with pH sensitivity of 52.29 mV/pH and linearity of 99.13% is obtained. These results of the GaN-based LAPS show great promise and it could be used as a single chemical sensor or integrated optoelectronic chemical sensor array for biomedical research with high spatial resolution.

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DO - 10.7567/APEX.6.036601

M3 - 文章

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SN - 1882-0778

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JO - Applied Physics Express

JF - Applied Physics Express

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GaN thin film based light addressable potentiometric sensor for pH sensing application

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