GaN/Si(111) epilayer based on low temperature Al/N and AlGaN/GaN superlattice for light emitting diodes

G. M. Wu*, C. W. Tsai, C. F. Shih, N. C. Chen, W. H. Feng

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

4 Scopus citations

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