GaN/Si(111) epilayer based on low temperature Al/N and AlGaN/GaN superlattice for light emitting diodes

  • Gwo-Mei Wu
  • , C.W. Tsai
  • , C.F. Shih
  • , N.C. Chen
  • , W.H. Feng

Research output: Contribution to journal › Journal Article › peer-review

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