Gate Leakage Effect in AlGaN/GaN HEMT with Negative Bias Stress

Liann-Be Chang

Research output: Contribution to conferenceProceeding

Original languageAmerican English
StatePublished - 2012
EventInternational Conference on Electrical Engineering & Computer - Dhaka, Bangladesh
Duration: 01 03 201201 03 2012

Conference

ConferenceInternational Conference on Electrical Engineering & Computer
Period01/03/1201/03/12

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