Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

H. K. Lin; Y. C. Lin; F. H. Huang; T. W. Fan; P. C. Chiu; J. I. Chyi; C. H. Ko; T. M. Kuan; M. K. Hsieh; W. C. Lee; C. H. Wann

doi:10.1016/j.sse.2010.01.013

Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

H. K. Lin^*, Y. C. Lin, F. H. Huang, T. W. Fan, P. C. Chiu, J. I. Chyi, C. H. Ko, T. M. Kuan, M. K. Hsieh, W. C. Lee, C. H. Wann

^*Corresponding author for this work

Research output: Contribution to journal › Journal Article › peer-review

8 Scopus citations

Abstract

Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at V_DS = 0.5 V and I_D = 100 mA/mm, and gate leakage to 1 × 10^-3 mA/mm from 4 at V_GS = -1.2 V and V_DS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.

Original language	English
Pages (from-to)	475-478
Number of pages	4
Journal	Solid-State Electronics
Volume	54
Issue number	4
DOIs	https://doi.org/10.1016/j.sse.2010.01.013
State	Published - 04 2010
Externally published	Yes

Keywords

HEMT
InAs/AlSb

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10.1016/j.sse.2010.01.013

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title = "Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors",

abstract = "Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at VDS = 0.5 V and ID = 100 mA/mm, and gate leakage to 1 × 10-3 mA/mm from 4 at VGS = -1.2 V and VDS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.",

keywords = "HEMT, InAs/AlSb",

author = "Lin, {H. K.} and Lin, {Y. C.} and Huang, {F. H.} and Fan, {T. W.} and Chiu, {P. C.} and Chyi, {J. I.} and Ko, {C. H.} and Kuan, {T. M.} and Hsieh, {M. K.} and Lee, {W. C.} and Wann, {C. H.}",

year = "2010",

month = apr,

doi = "10.1016/j.sse.2010.01.013",

language = "英语",

volume = "54",

pages = "475--478",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier Ltd",

number = "4",

}

TY - JOUR

T1 - Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

AU - Lin, H. K.

AU - Lin, Y. C.

AU - Huang, F. H.

AU - Fan, T. W.

AU - Chiu, P. C.

AU - Chyi, J. I.

AU - Ko, C. H.

AU - Kuan, T. M.

AU - Hsieh, M. K.

AU - Lee, W. C.

AU - Wann, C. H.

PY - 2010/4

Y1 - 2010/4

N2 - Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at VDS = 0.5 V and ID = 100 mA/mm, and gate leakage to 1 × 10-3 mA/mm from 4 at VGS = -1.2 V and VDS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.

AB - Conventional InAs/AlSb HEMTs suffer from chemical instability in materials and high kink current. To avoid these drawbacks, this work proposes a novel layer structure of an InAsSb/AlSb HEMT and a novel two-step passivation process. Performance improvements are reduced dc output conductance by approximately 4.6 times at VDS = 0.5 V and ID = 100 mA/mm, and gate leakage to 1 × 10-3 mA/mm from 4 at VGS = -1.2 V and VDS = 0.8 V compared with those of two InAs/AlSb HEMTs, one with the conventional one-step and the other with the proposed two-step passivation process. Both dc and rf performances show strong evidences of impact ionization suppression.

KW - HEMT

KW - InAs/AlSb

UR - http://www.scopus.com/inward/record.url?scp=77349114217&partnerID=8YFLogxK

U2 - 10.1016/j.sse.2010.01.013

DO - 10.1016/j.sse.2010.01.013

M3 - 文章

AN - SCOPUS:77349114217

SN - 0038-1101

VL - 54

SP - 475

EP - 478

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 4

ER -

Gate leakage lowering and kink current suppression for antimonide-based field-effect transistors

Abstract

Keywords

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