Gate oxide with ultra-high temperature annealing for data retention performance improvement in DRAM

Research output: Contribution to conferenceProceeding

Original languageAmerican English
StatePublished - 2012
EventThe 10th Annual Meeting of Formosa Group of Companies on Applied Engineering Technology - Taipei, Taiwan
Duration: 21 06 201221 06 2012

Conference

ConferenceThe 10th Annual Meeting of Formosa Group of Companies on Applied Engineering Technology
Period21/06/1221/06/12

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