Abstract
Circuit cells for DRAM-style programmable syn- apses and gain-adjustable neurons, which achieve high packing density and hardware annealing, are described. The 8-b accuracy in synapse weights can be achieved in a 0.2-s refresh cycle and the gain-adjustable neurons can be used to apply the hardware annealing technique for efficient searching of the optimal solution.
| Original language | English |
|---|---|
| Pages (from-to) | 1299-1302 |
| Number of pages | 4 |
| Journal | IEEE Journal of Solid-State Circuits |
| Volume | 27 |
| Issue number | 9 |
| DOIs | |
| State | Published - 09 1992 |
| Externally published | Yes |