Gettering properties in praseodymium-added crystal growth

Liann Be Chang; Yi Chang Cheng; Hung Thung Wang

doi:10.1143/jjap.37.811

Gettering properties in praseodymium-added crystal growth

Liann Be Chang^*, Yi Chang Cheng, Hung Thung Wang

^*Corresponding author for this work

National Defense University Taiwan

Research output: Contribution to journal › Journal Article › peer-review

1 Scopus citations

Abstract

Both Auger and secondary ion mass spectroscopy (SIMS) measurements were carried out to give a direct evidence of the impurity gettering phenomena of the rare earth (RE) element Praseodymium (Pr) for the first time during liquid phase thin crystal film growth. Sullur and praseodymium intentionally co-added samples were grown and a significant (around two orders of magnitudes) decrease in the sullur concentration was reported.

Original language	English
Pages (from-to)	811-812
Number of pages	2
Journal	Japanese Journal of Applied Physics
Volume	37
Issue number	3 A
DOIs	https://doi.org/10.1143/jjap.37.811
State	Published - 03 1998
Externally published	Yes

Keywords

Gettering effect
Liquid phase epitaxy
Praseodymium

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10.1143/jjap.37.811

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abstract = "Both Auger and secondary ion mass spectroscopy (SIMS) measurements were carried out to give a direct evidence of the impurity gettering phenomena of the rare earth (RE) element Praseodymium (Pr) for the first time during liquid phase thin crystal film growth. Sullur and praseodymium intentionally co-added samples were grown and a significant (around two orders of magnitudes) decrease in the sullur concentration was reported.",

keywords = "Gettering effect, Liquid phase epitaxy, Praseodymium",

author = "Chang, {Liann Be} and Cheng, {Yi Chang} and Wang, {Hung Thung}",

year = "1998",

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doi = "10.1143/jjap.37.811",

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volume = "37",

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journal = "Japanese Journal of Applied Physics",

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AU - Chang, Liann Be

AU - Cheng, Yi Chang

AU - Wang, Hung Thung

PY - 1998/3

Y1 - 1998/3

N2 - Both Auger and secondary ion mass spectroscopy (SIMS) measurements were carried out to give a direct evidence of the impurity gettering phenomena of the rare earth (RE) element Praseodymium (Pr) for the first time during liquid phase thin crystal film growth. Sullur and praseodymium intentionally co-added samples were grown and a significant (around two orders of magnitudes) decrease in the sullur concentration was reported.

AB - Both Auger and secondary ion mass spectroscopy (SIMS) measurements were carried out to give a direct evidence of the impurity gettering phenomena of the rare earth (RE) element Praseodymium (Pr) for the first time during liquid phase thin crystal film growth. Sullur and praseodymium intentionally co-added samples were grown and a significant (around two orders of magnitudes) decrease in the sullur concentration was reported.

KW - Gettering effect

KW - Liquid phase epitaxy

KW - Praseodymium

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U2 - 10.1143/jjap.37.811

DO - 10.1143/jjap.37.811

M3 - 文章

AN - SCOPUS:0032022019

SN - 0021-4922

VL - 37

SP - 811

EP - 812

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 3 A

ER -

Gettering properties in praseodymium-added crystal growth

Abstract

Keywords

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