Going green for discrete power diode manufacturers

Cher Ming Tan, Lina Sun, Chase Wang

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100°C and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400°C and 4 hours of fabrication duration. Experimental results show that the diode produced do possess typical diode electrical characteristics.

Original languageEnglish
Title of host publication2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009
Pages3303-3306
Number of pages4
DOIs
StatePublished - 2009
Externally publishedYes
Event2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009 - Xi'an, China
Duration: 25 05 200927 05 2009

Publication series

Name2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009

Conference

Conference2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009
Country/TerritoryChina
CityXi'an
Period25/05/0927/05/09

Keywords

  • Energy consumption
  • Junction interface characterization
  • Power diode
  • Wafer bonding

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