Going green for discrete power diode manufacturers

Cher Ming Tan; Lina Sun; Chase Wang

doi:10.1109/ICIEA.2009.5138814

Going green for discrete power diode manufacturers

Cher Ming Tan
, Lina Sun
, Chase Wang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100°C and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400°C and 4 hours of fabrication duration. Experimental results show that the diode produced do possess typical diode electrical characteristics.

Original language	English
Title of host publication	2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009
Pages	3303-3306
Number of pages	4
DOIs	https://doi.org/10.1109/ICIEA.2009.5138814
State	Published - 2009
Externally published	Yes
Event	2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009 - Xi'an, China Duration: 25 05 2009 → 27 05 2009

Publication series

Name	2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009

Conference

Conference	2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009
Country/Territory	China
City	Xi'an
Period	25/05/09 → 27/05/09

Keywords

Energy consumption
Junction interface characterization
Power diode
Wafer bonding

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1109/ICIEA.2009.5138814

Cite this

@inproceedings{11cc8d984192415ea940132459f6a2f3,

title = "Going green for discrete power diode manufacturers",

abstract = "Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100°C and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400°C and 4 hours of fabrication duration. Experimental results show that the diode produced do possess typical diode electrical characteristics.",

keywords = "Energy consumption, Junction interface characterization, Power diode, Wafer bonding",

author = "Tan, \{Cher Ming\} and Lina Sun and Chase Wang",

year = "2009",

doi = "10.1109/ICIEA.2009.5138814",

language = "英语",

isbn = "9781424428007",

series = "2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009",

pages = "3303--3306",

booktitle = "2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009",

note = "2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009 ; Conference date: 25-05-2009 Through 27-05-2009",

}

Tan, CM, Sun, L & Wang, C 2009, Going green for discrete power diode manufacturers. in 2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009., 5138814, 2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009, pp. 3303-3306, 2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009, Xi'an, China, 25/05/09. https://doi.org/10.1109/ICIEA.2009.5138814

Going green for discrete power diode manufacturers. / Tan, Cher Ming; Sun, Lina; Wang, Chase.
2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009. 2009. p. 3303-3306 5138814 (2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - Going green for discrete power diode manufacturers

AU - Tan, Cher Ming

AU - Sun, Lina

AU - Wang, Chase

PY - 2009

Y1 - 2009

N2 - Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100°C and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400°C and 4 hours of fabrication duration. Experimental results show that the diode produced do possess typical diode electrical characteristics.

AB - Owing to its deep diffusion requirement for discrete power diode of rating above 400V and 1A, the time and temperature for p+ and n+ diffusion of a typical p+nn+ discrete power diode are around 1100°C and more than 36 hours. This represents tremendous power consumption in the manufacturing of power diode. In this work, we propose an alternative method for producing the discrete power diode which requires only 400°C and 4 hours of fabrication duration. Experimental results show that the diode produced do possess typical diode electrical characteristics.

KW - Energy consumption

KW - Junction interface characterization

KW - Power diode

KW - Wafer bonding

UR - https://www.scopus.com/pages/publications/70349305712

U2 - 10.1109/ICIEA.2009.5138814

DO - 10.1109/ICIEA.2009.5138814

M3 - 会议稿件

AN - SCOPUS:70349305712

SN - 9781424428007

T3 - 2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009

SP - 3303

EP - 3306

BT - 2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009

T2 - 2009 4th IEEE Conference on Industrial Electronics and Applications, ICIEA 2009

Y2 - 25 May 2009 through 27 May 2009

ER -

Going green for discrete power diode manufacturers

Abstract

Publication series

Conference

Keywords

UN SDGs

Access to Document

Other files and links

Fingerprint

Cite this