Good high-temperature stability of TiN/Al2O3/WN/ TiN capacitors

Tung Ming Pan; Chun I. Hsieh; Tsai Yu Huang; Jian Ron Yang; Pin Sun Kuo

doi:10.1109/LED.2007.906466

Good high-temperature stability of TiN/Al₂O₃/WN/ TiN capacitors

Tung Ming Pan^*, Chun I. Hsieh, Tsai Yu Huang, Jian Ron Yang, Pin Sun Kuo

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

11 Scopus citations

Abstract

For the first time, good thermal stability up to an annealing temperature of 1000 °C has been demonstrated for a new TiN/Al₂O₃/WN/TiN capacitor structure. Good electrical performance has been achieved for the proposed layer structure, including a high dielectric constant of ∼10, low leakage current of 1.2 × 10^-7 A/cm² at 1 V, and excellent reliability. A thin WN layer was incorporated into the metal-insulator-metal capacitor between the bottom TiN electrode and the Al₂O₃ dielectric suppressing of interfacial-layer formation at Al₂O₃/TiN interfaces and resulting in a smoother Al₂O₃/TiN interface. This new layer structure is very attractive for deep-trench capacitor applications in DRAM technologies beyond 50 nm.

Original language	English
Pages (from-to)	954-956
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	28
Issue number	11
DOIs	https://doi.org/10.1109/LED.2007.906466
State	Published - 11 2007

Keywords

Bottom TiN electrode
DRAM
Metal-insulator-metal (MIM)
TiN/AlO/WN/TiN capacitor structure
WN layer

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10.1109/LED.2007.906466

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title = "Good high-temperature stability of TiN/Al2O3/WN/ TiN capacitors",

abstract = "For the first time, good thermal stability up to an annealing temperature of 1000 °C has been demonstrated for a new TiN/Al2O3/WN/TiN capacitor structure. Good electrical performance has been achieved for the proposed layer structure, including a high dielectric constant of ∼10, low leakage current of 1.2 × 10-7 A/cm2 at 1 V, and excellent reliability. A thin WN layer was incorporated into the metal-insulator-metal capacitor between the bottom TiN electrode and the Al2O3 dielectric suppressing of interfacial-layer formation at Al2O3/TiN interfaces and resulting in a smoother Al2O3/TiN interface. This new layer structure is very attractive for deep-trench capacitor applications in DRAM technologies beyond 50 nm.",

keywords = "Bottom TiN electrode, DRAM, Metal-insulator-metal (MIM), TiN/AlO/WN/TiN capacitor structure, WN layer",

author = "Pan, {Tung Ming} and Hsieh, {Chun I.} and Huang, {Tsai Yu} and Yang, {Jian Ron} and Kuo, {Pin Sun}",

year = "2007",

month = nov,

doi = "10.1109/LED.2007.906466",

language = "英语",

volume = "28",

pages = "954--956",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "11",

}

TY - JOUR

T1 - Good high-temperature stability of TiN/Al2O3/WN/ TiN capacitors

AU - Pan, Tung Ming

AU - Hsieh, Chun I.

AU - Huang, Tsai Yu

AU - Yang, Jian Ron

AU - Kuo, Pin Sun

PY - 2007/11

Y1 - 2007/11

N2 - For the first time, good thermal stability up to an annealing temperature of 1000 °C has been demonstrated for a new TiN/Al2O3/WN/TiN capacitor structure. Good electrical performance has been achieved for the proposed layer structure, including a high dielectric constant of ∼10, low leakage current of 1.2 × 10-7 A/cm2 at 1 V, and excellent reliability. A thin WN layer was incorporated into the metal-insulator-metal capacitor between the bottom TiN electrode and the Al2O3 dielectric suppressing of interfacial-layer formation at Al2O3/TiN interfaces and resulting in a smoother Al2O3/TiN interface. This new layer structure is very attractive for deep-trench capacitor applications in DRAM technologies beyond 50 nm.

AB - For the first time, good thermal stability up to an annealing temperature of 1000 °C has been demonstrated for a new TiN/Al2O3/WN/TiN capacitor structure. Good electrical performance has been achieved for the proposed layer structure, including a high dielectric constant of ∼10, low leakage current of 1.2 × 10-7 A/cm2 at 1 V, and excellent reliability. A thin WN layer was incorporated into the metal-insulator-metal capacitor between the bottom TiN electrode and the Al2O3 dielectric suppressing of interfacial-layer formation at Al2O3/TiN interfaces and resulting in a smoother Al2O3/TiN interface. This new layer structure is very attractive for deep-trench capacitor applications in DRAM technologies beyond 50 nm.

KW - Bottom TiN electrode

KW - DRAM

KW - Metal-insulator-metal (MIM)

KW - TiN/AlO/WN/TiN capacitor structure

KW - WN layer

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U2 - 10.1109/LED.2007.906466

DO - 10.1109/LED.2007.906466

M3 - 文章

AN - SCOPUS:36148988464

SN - 0741-3106

VL - 28

SP - 954

EP - 956

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 11

ER -

Good high-temperature stability of TiN/Al₂O₃/WN/ TiN capacitors

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Keywords

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