Graphene as a buffer layer for high quality GaN deposition on substrates in electronics

Preetpal Singh; Chao Sung Lai; Cher Ming Tan

doi:10.1109/ISNE.2016.7543408

Graphene as a buffer layer for high quality GaN deposition on substrates in electronics

Preetpal Singh, Chao Sung Lai, Cher Ming Tan

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

Micro etched graphene is used to reduce the lattice mismatch as well as thermal mismatch between GaN and sapphire. 3 layers of graphene has shown to be more promising candidate as a buffer layer then monolayer graphene in improving the crystal quality of GaN on sapphire.

Original language	English
Title of host publication	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781509024391
DOIs	https://doi.org/10.1109/ISNE.2016.7543408
State	Published - 12 08 2016
Event	5th International Symposium on Next-Generation Electronics, ISNE 2016 - Hsinchu, Taiwan Duration: 04 05 2016 → 06 05 2016

Publication series

Name	2016 5th International Symposium on Next-Generation Electronics, ISNE 2016

Conference

Conference	5th International Symposium on Next-Generation Electronics, ISNE 2016
Country/Territory	Taiwan
City	Hsinchu
Period	04/05/16 → 06/05/16

Bibliographical note

Publisher Copyright:
© 2016 IEEE.

Keywords

Buffer layer
graphene
stress relief

Access to Document

10.1109/ISNE.2016.7543408

Cite this

Singh, P., Lai, C. S., & Tan, C. M. (2016). Graphene as a buffer layer for high quality GaN deposition on substrates in electronics. In 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016 Article 7543408 (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISNE.2016.7543408

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keywords = "Buffer layer, graphene, stress relief",

author = "Preetpal Singh and Lai, {Chao Sung} and Tan, {Cher Ming}",

note = "Publisher Copyright: {\textcopyright} 2016 IEEE.; 5th International Symposium on Next-Generation Electronics, ISNE 2016 ; Conference date: 04-05-2016 Through 06-05-2016",

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doi = "10.1109/ISNE.2016.7543408",

language = "英语",

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Singh, P, Lai, CS & Tan, CM 2016, Graphene as a buffer layer for high quality GaN deposition on substrates in electronics. in 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016., 7543408, 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016, Institute of Electrical and Electronics Engineers Inc., 5th International Symposium on Next-Generation Electronics, ISNE 2016, Hsinchu, Taiwan, 04/05/16. https://doi.org/10.1109/ISNE.2016.7543408

Graphene as a buffer layer for high quality GaN deposition on substrates in electronics. / Singh, Preetpal; Lai, Chao Sung; Tan, Cher Ming.
2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. Institute of Electrical and Electronics Engineers Inc., 2016. 7543408 (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - Micro etched graphene is used to reduce the lattice mismatch as well as thermal mismatch between GaN and sapphire. 3 layers of graphene has shown to be more promising candidate as a buffer layer then monolayer graphene in improving the crystal quality of GaN on sapphire.

AB - Micro etched graphene is used to reduce the lattice mismatch as well as thermal mismatch between GaN and sapphire. 3 layers of graphene has shown to be more promising candidate as a buffer layer then monolayer graphene in improving the crystal quality of GaN on sapphire.

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KW - stress relief

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Singh P, Lai CS, Tan CM. Graphene as a buffer layer for high quality GaN deposition on substrates in electronics. In 2016 5th International Symposium on Next-Generation Electronics, ISNE 2016. Institute of Electrical and Electronics Engineers Inc. 2016. 7543408. (2016 5th International Symposium on Next-Generation Electronics, ISNE 2016). doi: 10.1109/ISNE.2016.7543408

Graphene as a buffer layer for high quality GaN deposition on substrates in electronics

Abstract

Publication series

Conference

Bibliographical note

Keywords

Access to Document

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