Graphene nanodots with high-k dielectrics for flash memory applications

Kai Ping Chang; Han Hsiang Tai; Jer Chyi Wang; Chao Sung Lai

doi:10.1109/ASICON.2017.8252506

Graphene nanodots with high-k dielectrics for flash memory applications

Kai Ping Chang, Han Hsiang Tai, Jer Chyi Wang, Chao Sung Lai

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

In this work, graphene nanodots have been fabricated and characterized as it has the potential for nanodevices application. Here we show non-volatile memory devices based on the capacitor structure by using graphene nanodots as the charge storage nodes. The graphene nanodots on silicon dioxide tunneling barrier were fabricated by etching the graphene with gold nanoparticles as self-aligned mask. Furthermore, different blocking oxide layer were also adopted to optimize the memory characteristics, including retention and operation speed. The memory of graphene nanodots with high-k blocking oxide layer shows higher flat-band voltage shift at low programming voltage, and excellent charge loss less than 12% after 10⁴ sec, potentially provides a promising route for non-volatile memory application.

Original language	English
Title of host publication	Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017
Editors	Yajie Qin, Zhiliang Hong, Ting-Ao Tang
Publisher	IEEE Computer Society
Pages	433-435
Number of pages	3
ISBN (Electronic)	9781509066247
DOIs	https://doi.org/10.1109/ASICON.2017.8252506
State	Published - 01 07 2017
Event	12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017 - Guiyang, China Duration: 25 10 2017 → 28 10 2017

Publication series

Name	Proceedings of International Conference on ASIC
Volume	2017-October
ISSN (Print)	2162-7541
ISSN (Electronic)	2162-755X

Conference

Conference	12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017
Country/Territory	China
City	Guiyang
Period	25/10/17 → 28/10/17

Bibliographical note

Publisher Copyright:
© 2017 IEEE.

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10.1109/ASICON.2017.8252506

Cite this

Chang, K. P., Tai, H. H., Wang, J. C., & Lai, C. S. (2017). Graphene nanodots with high-k dielectrics for flash memory applications. In Y. Qin, Z. Hong, & T.-A. Tang (Eds.), Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017 (pp. 433-435). (Proceedings of International Conference on ASIC; Vol. 2017-October). IEEE Computer Society. https://doi.org/10.1109/ASICON.2017.8252506

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title = "Graphene nanodots with high-k dielectrics for flash memory applications",

abstract = "In this work, graphene nanodots have been fabricated and characterized as it has the potential for nanodevices application. Here we show non-volatile memory devices based on the capacitor structure by using graphene nanodots as the charge storage nodes. The graphene nanodots on silicon dioxide tunneling barrier were fabricated by etching the graphene with gold nanoparticles as self-aligned mask. Furthermore, different blocking oxide layer were also adopted to optimize the memory characteristics, including retention and operation speed. The memory of graphene nanodots with high-k blocking oxide layer shows higher flat-band voltage shift at low programming voltage, and excellent charge loss less than 12\% after 104 sec, potentially provides a promising route for non-volatile memory application.",

author = "Chang, \{Kai Ping\} and Tai, \{Han Hsiang\} and Wang, \{Jer Chyi\} and Lai, \{Chao Sung\}",

note = "Publisher Copyright: {\textcopyright} 2017 IEEE.; 12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017 ; Conference date: 25-10-2017 Through 28-10-2017",

year = "2017",

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doi = "10.1109/ASICON.2017.8252506",

language = "英语",

series = "Proceedings of International Conference on ASIC",

publisher = "IEEE Computer Society",

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}

Chang, KP, Tai, HH, Wang, JC & Lai, CS 2017, Graphene nanodots with high-k dielectrics for flash memory applications. in Y Qin, Z Hong & T-A Tang (eds), Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. Proceedings of International Conference on ASIC, vol. 2017-October, IEEE Computer Society, pp. 433-435, 12th IEEE International Conference on Advanced Semiconductor Integrated Circuits, ASICON 2017, Guiyang, China, 25/10/17. https://doi.org/10.1109/ASICON.2017.8252506

Graphene nanodots with high-k dielectrics for flash memory applications. / Chang, Kai Ping; Tai, Han Hsiang; Wang, Jer Chyi et al.
Proceedings - 2017 IEEE 12th International Conference on ASIC, ASICON 2017. ed. / Yajie Qin; Zhiliang Hong; Ting-Ao Tang. IEEE Computer Society, 2017. p. 433-435 (Proceedings of International Conference on ASIC; Vol. 2017-October).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - In this work, graphene nanodots have been fabricated and characterized as it has the potential for nanodevices application. Here we show non-volatile memory devices based on the capacitor structure by using graphene nanodots as the charge storage nodes. The graphene nanodots on silicon dioxide tunneling barrier were fabricated by etching the graphene with gold nanoparticles as self-aligned mask. Furthermore, different blocking oxide layer were also adopted to optimize the memory characteristics, including retention and operation speed. The memory of graphene nanodots with high-k blocking oxide layer shows higher flat-band voltage shift at low programming voltage, and excellent charge loss less than 12% after 104 sec, potentially provides a promising route for non-volatile memory application.

AB - In this work, graphene nanodots have been fabricated and characterized as it has the potential for nanodevices application. Here we show non-volatile memory devices based on the capacitor structure by using graphene nanodots as the charge storage nodes. The graphene nanodots on silicon dioxide tunneling barrier were fabricated by etching the graphene with gold nanoparticles as self-aligned mask. Furthermore, different blocking oxide layer were also adopted to optimize the memory characteristics, including retention and operation speed. The memory of graphene nanodots with high-k blocking oxide layer shows higher flat-band voltage shift at low programming voltage, and excellent charge loss less than 12% after 104 sec, potentially provides a promising route for non-volatile memory application.

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Graphene nanodots with high-k dielectrics for flash memory applications

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