Growth and characterization of copper indium diselenide thin films by molecular beam deposition

H. Y. Ueng; D. Y. Chang; J. L. Lin

doi:10.1557/proc-426-255

Growth and characterization of copper indium diselenide thin films by molecular beam deposition

H. Y. Ueng^*
, D. Y. Chang
, J. L. Lin

^*Corresponding author for this work

National Sun Yat-sen University

Research output: Contribution to journal › Conference article › peer-review

Abstract

CuInSe₂ thin films grown on Corning 7059 glass substrates were prepared by molecular beam deposition method with various Cu/In ratios in order to study the relationship between composition and material properties. Under a fixed copper beam flux intensity and overpressure selenium environments, the composition of films was modulated by changing the indium beam flux intensity to obtain Cu-rich or In-rich films. The X-ray diffraction patterns show that the epitaxy films grown onto glass substrates are the polycrystalline structure. The grain size of polycrystalline films indicate that the surface morphology of the films are varied as a function of Cu/In ratio.

Original language	English
Pages (from-to)	255-260
Number of pages	6
Journal	Materials Research Society Symposium - Proceedings
Volume	426
DOIs	https://doi.org/10.1557/proc-426-255
State	Published - 1996
Externally published	Yes
Event	Proceedings of the 1996 MRS Spring Symposium - San Francisco, CA, USA Duration: 08 04 1996 → 11 04 1996

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title = "Growth and characterization of copper indium diselenide thin films by molecular beam deposition",

abstract = "CuInSe2 thin films grown on Corning 7059 glass substrates were prepared by molecular beam deposition method with various Cu/In ratios in order to study the relationship between composition and material properties. Under a fixed copper beam flux intensity and overpressure selenium environments, the composition of films was modulated by changing the indium beam flux intensity to obtain Cu-rich or In-rich films. The X-ray diffraction patterns show that the epitaxy films grown onto glass substrates are the polycrystalline structure. The grain size of polycrystalline films indicate that the surface morphology of the films are varied as a function of Cu/In ratio.",

author = "Ueng, \{H. Y.\} and Chang, \{D. Y.\} and Lin, \{J. L.\}",

year = "1996",

doi = "10.1557/proc-426-255",

language = "英语",

volume = "426",

pages = "255--260",

journal = "Materials Research Society Symposium - Proceedings",

issn = "0272-9172",

publisher = "Materials Research Society",

note = "Proceedings of the 1996 MRS Spring Symposium ; Conference date: 08-04-1996 Through 11-04-1996",

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TY - JOUR

T1 - Growth and characterization of copper indium diselenide thin films by molecular beam deposition

AU - Ueng, H. Y.

AU - Chang, D. Y.

AU - Lin, J. L.

PY - 1996

Y1 - 1996

N2 - CuInSe2 thin films grown on Corning 7059 glass substrates were prepared by molecular beam deposition method with various Cu/In ratios in order to study the relationship between composition and material properties. Under a fixed copper beam flux intensity and overpressure selenium environments, the composition of films was modulated by changing the indium beam flux intensity to obtain Cu-rich or In-rich films. The X-ray diffraction patterns show that the epitaxy films grown onto glass substrates are the polycrystalline structure. The grain size of polycrystalline films indicate that the surface morphology of the films are varied as a function of Cu/In ratio.

AB - CuInSe2 thin films grown on Corning 7059 glass substrates were prepared by molecular beam deposition method with various Cu/In ratios in order to study the relationship between composition and material properties. Under a fixed copper beam flux intensity and overpressure selenium environments, the composition of films was modulated by changing the indium beam flux intensity to obtain Cu-rich or In-rich films. The X-ray diffraction patterns show that the epitaxy films grown onto glass substrates are the polycrystalline structure. The grain size of polycrystalline films indicate that the surface morphology of the films are varied as a function of Cu/In ratio.

UR - https://www.scopus.com/pages/publications/0030400433

U2 - 10.1557/proc-426-255

DO - 10.1557/proc-426-255

M3 - 会议文章

AN - SCOPUS:0030400433

SN - 0272-9172

VL - 426

SP - 255

EP - 260

JO - Materials Research Society Symposium - Proceedings

JF - Materials Research Society Symposium - Proceedings

T2 - Proceedings of the 1996 MRS Spring Symposium

Y2 - 8 April 1996 through 11 April 1996

ER -

Growth and characterization of copper indium diselenide thin films by molecular beam deposition

Abstract

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