Growth and Characterization of Direct‐connecting AlGaAs/GaAs TJS Light Emitting Device on SI GaAs Substrate by LPE

L. B. Chang*, H. Lan

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

1 Scopus citations

Abstract

High output power (above 3 mW/facet) AlGaAs/GaAs Transverse‐Junction Stripe light emitting diodes have been grown on Semi‐Insulating (100) GaAs substrates by Liquid Phase Epitaxy. these light emitting diodes utilize a “Direct‐connecting” transverse‐junction stripe structure, which can confine the transverse‐current and reduce the series resistance. By thinning the thickness of the “effective active‐layer” of this structure, a room‐temperature pulsed lasing operation is also achieved with a threshold current as low as 35 mA and a peak wavelength around 904 nm. This “Direct‐connecting” transverse‐Junction Stripe light emitting device with a Metal‐Semiconductor Field Effect Transistor on an electrical isolated semi‐insulating substrate in the future.

Original languageEnglish
Pages (from-to)311-320
Number of pages10
JournalCrystal Research and Technology
Volume27
Issue number3
DOIs
StatePublished - 1992
Externally publishedYes

Fingerprint

Dive into the research topics of 'Growth and Characterization of Direct‐connecting AlGaAs/GaAs TJS Light Emitting Device on SI GaAs Substrate by LPE'. Together they form a unique fingerprint.

Cite this