Growth mechanism for low temperature PVD graphene synthesis on copper using amorphous carbon

Udit Narula; Cher Ming Tan; Chao Sung Lai

doi:10.1038/srep44112

Growth mechanism for low temperature PVD graphene synthesis on copper using amorphous carbon

Udit Narula, Cher Ming Tan^*, Chao Sung Lai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Contribution to journal › Journal Article › peer-review

25 Scopus citations

Abstract

Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.

Original language	English
Article number	44112
Journal	Scientific Reports
Volume	7
DOIs	https://doi.org/10.1038/srep44112
State	Published - 09 03 2017

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© The Author(s) 2017.

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abstract = "Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.",

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AU - Tan, Cher Ming

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N2 - Growth mechanism for synthesizing PVD based Graphene using Amorphous Carbon, catalyzed by Copper is investigated in this work. Different experiments with respect to Amorphous Carbon film thickness, annealing time and temperature are performed for the investigation. Copper film stress and its effect on hydrogen diffusion through the film grain boundaries are found to be the key factors for the growth mechanism, and supported by our Finite Element Modeling. Low temperature growth of Graphene is achieved and the proposed growth mechanism is found to remain valid at low temperatures.

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Growth mechanism for low temperature PVD graphene synthesis on copper using amorphous carbon

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