Growth of Cu2ZnSnSe4 thin films by selenization of magnetron sputtered precursors for solar cells

Shou Yi Kuo*, Jui Fu Yang, Fang I. Lai, Chun Jung Lin

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Precursors of the Cu2ZnSnSe4 (CZTSe) absorber were deposition on Mo/glass substrate by radio-frequency (RF) magnetron sputtering at room temperature. The precursors were converted into CZTSe absorber by annealing in the selenium vapors at the substrate temperature of 550°C. CZTSe films have been characterized in detail using X-ray diffraction (XRD), Raman spectroscopy, photo luminescence (PL), energy dispersive spectrometer (EDS), and solar simulator. It was found that the structural and optical properties of CZTSe films. The p-type CZTSe absorber shows a peak below 0.9 eV at room temperature. Solar cells with the AZO/ZnO/CdS/CZTSe/Mo showed the best conversion efficiency of 1.78 % for 0.13 cm2 with Voc= 0.21 V, Jsc= 27.1 mA/cm2, and FF= 31.3 %.

Original languageEnglish
Title of host publicationProgram - 38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Pages2688-2691
Number of pages4
DOIs
StatePublished - 2012
Event38th IEEE Photovoltaic Specialists Conference, PVSC 2012 - Austin, TX, United States
Duration: 03 06 201208 06 2012

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Conference

Conference38th IEEE Photovoltaic Specialists Conference, PVSC 2012
Country/TerritoryUnited States
CityAustin, TX
Period03/06/1208/06/12

Keywords

  • CZTSe
  • photovoltaic cells

Fingerprint

Dive into the research topics of 'Growth of Cu2ZnSnSe4 thin films by selenization of magnetron sputtered precursors for solar cells'. Together they form a unique fingerprint.

Cite this