Growth of quaternary AlInGaN with various TMI molar rates

S. F. Yu, S. J. Chang, R. M. Lin, Y. H. Lin, Y. C. Lu, S. P. Chang, Y. Z. Chiou

Research output: Contribution to journalJournal Article peer-review

16 Scopus citations

Abstract

We report the growth of very thick (∼400 nm) quaternary AlInGaN layer on GaN/sapphire template by metalorganic chemical vapor deposition. By properly controlling the trimethylindium molar flow rate, we successfully achieved an Al0.89In0.02GaN layer perfectly lattice matched to the underneath GaN buffer. It was found that we can minimize the number of V-defect pits and the linewidth of X-ray (3 0 2) diffraction peak. Other than the AlInGaN-related photoluminescence peak, we also observed a low-energy band which is originated from indium segregation.

Original languageEnglish
Pages (from-to)1920-1924
Number of pages5
JournalJournal of Crystal Growth
Volume312
Issue number12-13
DOIs
StatePublished - 01 06 2010

Keywords

  • A3. Lattice matched
  • A3. MOCVD
  • B1. AlInGaN
  • B1. Quaternary

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