TY - JOUR
T1 - Growth of silicon-germanium alloy layers
AU - Maiti, C. K.
AU - Bera, L. K.
AU - Maikap, S.
AU - Ray, S. K.
AU - Chakrabarti, N. B.
AU - Kesavan, R.
AU - Kumar, V.
PY - 2000/7
Y1 - 2000/7
N2 - Heteroepitaxy techniques for the growth of group IV binary alloys, in particular, SiGe, SiC, GeC and SiSn films are reviewed. Deposition of heteroepitaxial films using various reactors like molecular beam epitaxy, gas source molecular beam epitaxy, and different chemical vapour deposition techniques are compared. Issues related to heteroepitaxial film deposition, such as critical layer thickness are examined. Growth of strained silicon on relaxed SiGe buffer layers, poly-SiGe film and hydrogenated amorphous SiGe (a-SiGe:H) film is also reviewed.
AB - Heteroepitaxy techniques for the growth of group IV binary alloys, in particular, SiGe, SiC, GeC and SiSn films are reviewed. Deposition of heteroepitaxial films using various reactors like molecular beam epitaxy, gas source molecular beam epitaxy, and different chemical vapour deposition techniques are compared. Issues related to heteroepitaxial film deposition, such as critical layer thickness are examined. Growth of strained silicon on relaxed SiGe buffer layers, poly-SiGe film and hydrogenated amorphous SiGe (a-SiGe:H) film is also reviewed.
UR - https://www.scopus.com/pages/publications/0034229929
U2 - 10.14429/dsj.50.3719
DO - 10.14429/dsj.50.3719
M3 - 文章
AN - SCOPUS:0034229929
SN - 0011-748X
VL - 50
SP - 299
EP - 315
JO - Defence Science Journal
JF - Defence Science Journal
IS - 3
ER -