Hafnium oxide gate dielectric for strained-Si1-xGex

C. K. Maiti; S. Maikap; S. Chatterjee; S. K. Nandi; S. K. Samanta

doi:10.1016/S0038-1101(03)00219-3

Hafnium oxide gate dielectric for strained-Si_1-xGe_x

C. K. Maiti^*, S. Maikap, S. Chatterjee, S. K. Nandi, S. K. Samanta

^*Corresponding author for this work

Indian Institute of Technology Kharagpur

Research output: Contribution to journal › Journal Article › peer-review

22 Scopus citations

Abstract

Ultrathin hafnium oxide (HfO₂) films have been deposited by rf sputtering on strained-Si_0.81Ge_0.19 films. The structure and chemical composition of the deposited films have been studied using high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and X-ray photo-electron spectroscopy techniques. Current conduction mechanism in HfO₂ films has been studied using current-voltage (I-V) characteristics. The leakage current is found to be dominated by the Schottky emission at a low electric field, whereas Poole-Frenkel emission takes over at a high electric field.

Original language	English
Pages (from-to)	1995-2000
Number of pages	6
Journal	Solid-State Electronics
Volume	47
Issue number	11
DOIs	https://doi.org/10.1016/S0038-1101(03)00219-3
State	Published - 11 2003
Externally published	Yes

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title = "Hafnium oxide gate dielectric for strained-Si1-xGex",

abstract = "Ultrathin hafnium oxide (HfO2) films have been deposited by rf sputtering on strained-Si0.81Ge0.19 films. The structure and chemical composition of the deposited films have been studied using high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and X-ray photo-electron spectroscopy techniques. Current conduction mechanism in HfO2 films has been studied using current-voltage (I-V) characteristics. The leakage current is found to be dominated by the Schottky emission at a low electric field, whereas Poole-Frenkel emission takes over at a high electric field.",

author = "Maiti, {C. K.} and S. Maikap and S. Chatterjee and Nandi, {S. K.} and Samanta, {S. K.}",

year = "2003",

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T1 - Hafnium oxide gate dielectric for strained-Si1-xGex

AU - Maiti, C. K.

AU - Maikap, S.

AU - Chatterjee, S.

AU - Nandi, S. K.

AU - Samanta, S. K.

PY - 2003/11

Y1 - 2003/11

N2 - Ultrathin hafnium oxide (HfO2) films have been deposited by rf sputtering on strained-Si0.81Ge0.19 films. The structure and chemical composition of the deposited films have been studied using high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and X-ray photo-electron spectroscopy techniques. Current conduction mechanism in HfO2 films has been studied using current-voltage (I-V) characteristics. The leakage current is found to be dominated by the Schottky emission at a low electric field, whereas Poole-Frenkel emission takes over at a high electric field.

AB - Ultrathin hafnium oxide (HfO2) films have been deposited by rf sputtering on strained-Si0.81Ge0.19 films. The structure and chemical composition of the deposited films have been studied using high resolution transmission electron microscopy, time-of-flight secondary ion mass spectroscopy and X-ray photo-electron spectroscopy techniques. Current conduction mechanism in HfO2 films has been studied using current-voltage (I-V) characteristics. The leakage current is found to be dominated by the Schottky emission at a low electric field, whereas Poole-Frenkel emission takes over at a high electric field.

UR - http://www.scopus.com/inward/record.url?scp=0042229226&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(03)00219-3

DO - 10.1016/S0038-1101(03)00219-3

M3 - 文章

AN - SCOPUS:0042229226

SN - 0038-1101

VL - 47

SP - 1995

EP - 2000

JO - Solid-State Electronics

JF - Solid-State Electronics

IS - 11

ER -

Hafnium oxide gate dielectric for strained-Si_1-xGe_x

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