Heteroepitaxial growth of InN by PA-MOMBE

Shou Yi Kuo*, Fang I. Lai, Wei Chun Chen, Woei Tyng Lin, Chien Nan Hsiao

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review


In this paper, high-quality wurtzite indium nitride was epi-grown by plasma-assisted metal-organic molecule beam epitaxy system (PA-MOMBE). Structural and electrical properties of the InN films were significantly improved by employing a GaN buffer layer. It was found that highly c-axis oriented InN epilayer can be obtained by optimizing growth conditions. TEM images reveal that the epitaxially-grown InN/GaN interface is sharp, and the spacing of the InN(0002) lattice plane is about 0.57 nm. Raman spectra also show a sharp peak at 491 cm-1 attributed to the E2(high) mode of wurtzite InN. These results indicate that the improvement of InN material quality can be achieved by using heteroepitaxy on GaN/sapphire templates.

Original languageEnglish
Title of host publication4th IEEE International NanoElectronics Conference, INEC 2011
StatePublished - 2011
Event4th IEEE International Nanoelectronics Conference, INEC 2011 - Tao-Yuan, Taiwan
Duration: 21 06 201124 06 2011

Publication series

NameProceedings - International NanoElectronics Conference, INEC
ISSN (Print)2159-3523


Conference4th IEEE International Nanoelectronics Conference, INEC 2011


  • InN
  • Metalorganic molecular beam epitaxy
  • heteroepitaxy


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