@inproceedings{8664ffa2120042e2943ea6b7eea7d1a4,
title = "Heteroepitaxial growth of InN by PA-MOMBE",
abstract = "In this paper, high-quality wurtzite indium nitride was epi-grown by plasma-assisted metal-organic molecule beam epitaxy system (PA-MOMBE). Structural and electrical properties of the InN films were significantly improved by employing a GaN buffer layer. It was found that highly c-axis oriented InN epilayer can be obtained by optimizing growth conditions. TEM images reveal that the epitaxially-grown InN/GaN interface is sharp, and the spacing of the InN(0002) lattice plane is about 0.57 nm. Raman spectra also show a sharp peak at 491 cm-1 attributed to the E2(high) mode of wurtzite InN. These results indicate that the improvement of InN material quality can be achieved by using heteroepitaxy on GaN/sapphire templates.",
keywords = "InN, Metalorganic molecular beam epitaxy, heteroepitaxy",
author = "Kuo, {Shou Yi} and Lai, {Fang I.} and Chen, {Wei Chun} and Lin, {Woei Tyng} and Hsiao, {Chien Nan}",
year = "2011",
doi = "10.1109/INEC.2011.5991699",
language = "英语",
isbn = "9781457703799",
series = "Proceedings - International NanoElectronics Conference, INEC",
booktitle = "4th IEEE International NanoElectronics Conference, INEC 2011",
note = "4th IEEE International Nanoelectronics Conference, INEC 2011 ; Conference date: 21-06-2011 Through 24-06-2011",
}