Heterojunction bipolar light-emitting transistors (HBLETs) fabricated with a lateral emission geometry for real-time optical wireless transmission

Chia Lung Tsai*, Yi Chen Lu, Chih Min Yu, Chia Yu Yu, Sun Chien Ko, Meng Chyi Wu

*Corresponding author for this work

Research output: Contribution to journalJournal Article peer-review

Abstract

Heterojunction bipolar light-emitting transistors (HBLETs) with a cleaved facet in the lateral direction for light emission are proposed for real-time optical wireless transmission. To prevent light shielding by the top metal electrodes, the light output power of the edge-emitting HBLETs exceeds that of those emitting from the top surface. Although the proposed HBLETs can generate spontaneous light emissions at λ ~965 nm, a reduced common-emitter current gain (β ~ 0.41) was found due to some of the minority carriers (electron) from the emitter being radiatively recombined within the In0.15Ga0.85As/GaAs multiple-quantum-well containing base layer. Results also show that a 300 Mbit/s optical link can be constructed using the proposed HBLET transmitter with a lateral emission geometry but its modulation bandwidth is as high as 237.5 MHz. The paper also describes the use of HBLET-based optical wireless communications to achieve real-time transmissions of digital TV signals over a distance of 100 cm in free space.

Original languageEnglish
Article number109598
JournalOptical Materials
Volume99
DOIs
StatePublished - 01 2020

Bibliographical note

Publisher Copyright:
© 2019 Elsevier B.V.

Keywords

  • HBLETs
  • Lateral emission geometry
  • Optical wireless communications

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