HfOx thin films for resistive memory device by use of atomic layer deposition

Pang Shiu Chen*, Heng Yuan Lee, Ching Chiun Wang, Ming Jinn Tsai, Kou Chen Liu

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

2 Scopus citations


The materials properties and resistance switching characteristics of hafnium oxide-based binary oxide were investigated for next generation memory device application. A nonstoichometric hafnium oxide (HfOx) film with a mixture structure of monoclinic and tetragonal phase and some metallic Hf-Hf bonds on TiN/Si were prepared by atomic layer chemical vapor deposition (ALCVD). Resistance random access memory devices consisting of Pt/HfOx/TiN/Si with low power operation (< 0.4 mW) and reset current (< 100 μA) were fabricated. The resistance ratio of high resistance state to low resistance state maintains 100-1000 and after 1000 cycles of repetitively switching. A 1-nm-thick Al2O3 film in the interface between top electrode and HfOx films, the Pt/Al2O3/HfO x/TiN/Si memory devices were found that soft-error of set and reset process often occurred. Interface states in the anode side may play an important role in maintaining a stable resistive switching for HfOx-based memory devices.

Original languageEnglish
Title of host publication2007 MRS Spring Meeting
PublisherMaterials Research Society
Number of pages7
ISBN (Print)9781558999572
StatePublished - 2007
Event2007 MRS Spring Meeting - San Francisco, CA, United States
Duration: 10 04 200713 04 2007

Publication series

NameMaterials Research Society Symposium Proceedings
ISSN (Print)0272-9172


Conference2007 MRS Spring Meeting
Country/TerritoryUnited States
CitySan Francisco, CA


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