HfOx thin films for resistive memory device by use of atomic layer deposition

Pang Shiu Chen; Heng Yuan Lee; Ching Chiun Wang; Ming Jinn Tsai; Kou Chen Liu

doi:10.1557/proc-0997-i07-04

HfOx thin films for resistive memory device by use of atomic layer deposition

Pang Shiu Chen^*
, Heng Yuan Lee
, Ching Chiun Wang
, Ming Jinn Tsai
, Kou Chen Liu

^*Corresponding author for this work

Department of Electronic Engineering

Ming Hsin University of Science and Technology Taiwan
Industrial Technology Research Institute of Taiwan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

2 Scopus citations

Abstract

The materials properties and resistance switching characteristics of hafnium oxide-based binary oxide were investigated for next generation memory device application. A nonstoichometric hafnium oxide (HfO_x) film with a mixture structure of monoclinic and tetragonal phase and some metallic Hf-Hf bonds on TiN/Si were prepared by atomic layer chemical vapor deposition (ALCVD). Resistance random access memory devices consisting of Pt/HfO_x/TiN/Si with low power operation (< 0.4 mW) and reset current (< 100 μA) were fabricated. The resistance ratio of high resistance state to low resistance state maintains 100-1000 and after 1000 cycles of repetitively switching. A 1-nm-thick Al₂O₃ film in the interface between top electrode and HfO_x films, the Pt/Al₂O₃/HfO _x/TiN/Si memory devices were found that soft-error of set and reset process often occurred. Interface states in the anode side may play an important role in maintaining a stable resistive switching for HfO_x-based memory devices.

Original language	English
Title of host publication	2007 MRS Spring Meeting
Publisher	Materials Research Society
Pages	191-197
Number of pages	7
ISBN (Print)	9781558999572
DOIs	https://doi.org/10.1557/proc-0997-i07-04
State	Published - 2007
Event	2007 MRS Spring Meeting - San Francisco, CA, United States Duration: 10 04 2007 → 13 04 2007

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	997
ISSN (Print)	0272-9172

Conference

Conference	2007 MRS Spring Meeting
Country/Territory	United States
City	San Francisco, CA
Period	10/04/07 → 13/04/07

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

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10.1557/proc-0997-i07-04

Cite this

@inproceedings{93a06f2ef53b4f9e9a4ff7c68ee08659,

title = "HfOx thin films for resistive memory device by use of atomic layer deposition",

abstract = "The materials properties and resistance switching characteristics of hafnium oxide-based binary oxide were investigated for next generation memory device application. A nonstoichometric hafnium oxide (HfOx) film with a mixture structure of monoclinic and tetragonal phase and some metallic Hf-Hf bonds on TiN/Si were prepared by atomic layer chemical vapor deposition (ALCVD). Resistance random access memory devices consisting of Pt/HfOx/TiN/Si with low power operation (< 0.4 mW) and reset current (< 100 μA) were fabricated. The resistance ratio of high resistance state to low resistance state maintains 100-1000 and after 1000 cycles of repetitively switching. A 1-nm-thick Al2O3 film in the interface between top electrode and HfOx films, the Pt/Al2O3/HfO x/TiN/Si memory devices were found that soft-error of set and reset process often occurred. Interface states in the anode side may play an important role in maintaining a stable resistive switching for HfOx-based memory devices.",

author = "Chen, \{Pang Shiu\} and Lee, \{Heng Yuan\} and Wang, \{Ching Chiun\} and Tsai, \{Ming Jinn\} and Liu, \{Kou Chen\}",

year = "2007",

doi = "10.1557/proc-0997-i07-04",

language = "英语",

isbn = "9781558999572",

series = "Materials Research Society Symposium Proceedings",

publisher = "Materials Research Society",

pages = "191--197",

booktitle = "2007 MRS Spring Meeting",

address = "美国",

note = "2007 MRS Spring Meeting ; Conference date: 10-04-2007 Through 13-04-2007",

}

Chen, PS, Lee, HY, Wang, CC, Tsai, MJ & Liu, KC 2007, HfOx thin films for resistive memory device by use of atomic layer deposition. in 2007 MRS Spring Meeting. Materials Research Society Symposium Proceedings, vol. 997, Materials Research Society, pp. 191-197, 2007 MRS Spring Meeting, San Francisco, CA, United States, 10/04/07. https://doi.org/10.1557/proc-0997-i07-04

HfOx thin films for resistive memory device by use of atomic layer deposition. / Chen, Pang Shiu; Lee, Heng Yuan; Wang, Ching Chiun et al.
2007 MRS Spring Meeting. Materials Research Society, 2007. p. 191-197 (Materials Research Society Symposium Proceedings; Vol. 997).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - HfOx thin films for resistive memory device by use of atomic layer deposition

AU - Chen, Pang Shiu

AU - Lee, Heng Yuan

AU - Wang, Ching Chiun

AU - Tsai, Ming Jinn

AU - Liu, Kou Chen

PY - 2007

Y1 - 2007

N2 - The materials properties and resistance switching characteristics of hafnium oxide-based binary oxide were investigated for next generation memory device application. A nonstoichometric hafnium oxide (HfOx) film with a mixture structure of monoclinic and tetragonal phase and some metallic Hf-Hf bonds on TiN/Si were prepared by atomic layer chemical vapor deposition (ALCVD). Resistance random access memory devices consisting of Pt/HfOx/TiN/Si with low power operation (< 0.4 mW) and reset current (< 100 μA) were fabricated. The resistance ratio of high resistance state to low resistance state maintains 100-1000 and after 1000 cycles of repetitively switching. A 1-nm-thick Al2O3 film in the interface between top electrode and HfOx films, the Pt/Al2O3/HfO x/TiN/Si memory devices were found that soft-error of set and reset process often occurred. Interface states in the anode side may play an important role in maintaining a stable resistive switching for HfOx-based memory devices.

AB - The materials properties and resistance switching characteristics of hafnium oxide-based binary oxide were investigated for next generation memory device application. A nonstoichometric hafnium oxide (HfOx) film with a mixture structure of monoclinic and tetragonal phase and some metallic Hf-Hf bonds on TiN/Si were prepared by atomic layer chemical vapor deposition (ALCVD). Resistance random access memory devices consisting of Pt/HfOx/TiN/Si with low power operation (< 0.4 mW) and reset current (< 100 μA) were fabricated. The resistance ratio of high resistance state to low resistance state maintains 100-1000 and after 1000 cycles of repetitively switching. A 1-nm-thick Al2O3 film in the interface between top electrode and HfOx films, the Pt/Al2O3/HfO x/TiN/Si memory devices were found that soft-error of set and reset process often occurred. Interface states in the anode side may play an important role in maintaining a stable resistive switching for HfOx-based memory devices.

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U2 - 10.1557/proc-0997-i07-04

DO - 10.1557/proc-0997-i07-04

M3 - 会议稿件

AN - SCOPUS:38549151149

SN - 9781558999572

T3 - Materials Research Society Symposium Proceedings

SP - 191

EP - 197

BT - 2007 MRS Spring Meeting

PB - Materials Research Society

T2 - 2007 MRS Spring Meeting

Y2 - 10 April 2007 through 13 April 2007

ER -

HfOx thin films for resistive memory device by use of atomic layer deposition

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