High-κ Hf-based charge trapping layer with Al2O 3 blocking oxide for high-density flash memory

S. Maikap; P. J. Tzeng; L. S. Lee; H. Y. Lee; C. C. Wang; P. H. Tsai; K. S. Chang-Liao; W. J. Chen; K. C. Liu; P. R. Jeng; M. J. Tsai

doi:10.1109/VTSA.2006.251055

High-κ Hf-based charge trapping layer with Al₂O ₃ blocking oxide for high-density flash memory

S. Maikap^*, P. J. Tzeng, L. S. Lee, H. Y. Lee, C. C. Wang, P. H. Tsai, K. S. Chang-Liao, W. J. Chen, K. C. Liu, P. R. Jeng, M. J. Tsai

^*Corresponding author for this work

Department of Electronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

6 Scopus citations

Abstract

The high-K Hf-based charge trapping layer with Al₂O₃ blocking oxide in metal/Al₂O₃/HfO₂/SiO ₂/silicon (MAHOS) structure is proposed. The Al₂O ₃ as a blocking oxide on high-κ HfO₂ and HfAlO charge trapping layers can improve the program/erase speed and has good retention characteristics, indicating that the MAHOS structure is a promising candidate for future high-speed flash memory. The charge trapping characteristics with different metal gates are also investigated.

Original language	English
Title of host publication	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers
Pages	36-37
Number of pages	2
DOIs	https://doi.org/10.1109/VTSA.2006.251055
State	Published - 2006
Event	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Hsinchu, Taiwan Duration: 24 04 2006 → 26 04 2006

Publication series

Name	International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Conference

Conference	2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA
Country/Territory	Taiwan
City	Hsinchu
Period	24/04/06 → 26/04/06

Access to Document

10.1109/VTSA.2006.251055

Cite this

Maikap, S., Tzeng, P. J., Lee, L. S., Lee, H. Y., Wang, C. C., Tsai, P. H., Chang-Liao, K. S., Chen, W. J., Liu, K. C., Jeng, P. R., & Tsai, M. J. (2006). High-κ Hf-based charge trapping layer with Al₂O ₃ blocking oxide for high-density flash memory. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers (pp. 36-37). Article 4016591 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). https://doi.org/10.1109/VTSA.2006.251055

@inproceedings{6463edd89c18412a869589755b51ba6b,

title = "High-κ Hf-based charge trapping layer with Al2O 3 blocking oxide for high-density flash memory",

abstract = "The high-K Hf-based charge trapping layer with Al2O3 blocking oxide in metal/Al2O3/HfO2/SiO 2/silicon (MAHOS) structure is proposed. The Al2O 3 as a blocking oxide on high-κ HfO2 and HfAlO charge trapping layers can improve the program/erase speed and has good retention characteristics, indicating that the MAHOS structure is a promising candidate for future high-speed flash memory. The charge trapping characteristics with different metal gates are also investigated.",

author = "S. Maikap and Tzeng, {P. J.} and Lee, {L. S.} and Lee, {H. Y.} and Wang, {C. C.} and Tsai, {P. H.} and Chang-Liao, {K. S.} and Chen, {W. J.} and Liu, {K. C.} and Jeng, {P. R.} and Tsai, {M. J.}",

year = "2006",

doi = "10.1109/VTSA.2006.251055",

language = "英语",

isbn = "142440181X",

series = "International Symposium on VLSI Technology, Systems, and Applications, Proceedings",

pages = "36--37",

booktitle = "2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers",

note = "2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA ; Conference date: 24-04-2006 Through 26-04-2006",

}

Maikap, S, Tzeng, PJ, Lee, LS, Lee, HY, Wang, CC, Tsai, PH, Chang-Liao, KS, Chen, WJ, Liu, KC, Jeng, PR & Tsai, MJ 2006, High-κ Hf-based charge trapping layer with Al₂O ₃ blocking oxide for high-density flash memory. in 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers., 4016591, International Symposium on VLSI Technology, Systems, and Applications, Proceedings, pp. 36-37, 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA, Hsinchu, Taiwan, 24/04/06. https://doi.org/10.1109/VTSA.2006.251055

High-κ Hf-based charge trapping layer with Al₂O ₃ blocking oxide for high-density flash memory. / Maikap, S.; Tzeng, P. J.; Lee, L. S. et al.
2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. 2006. p. 36-37 4016591 (International Symposium on VLSI Technology, Systems, and Applications, Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

TY - GEN

T1 - High-κ Hf-based charge trapping layer with Al2O 3 blocking oxide for high-density flash memory

AU - Maikap, S.

AU - Tzeng, P. J.

AU - Lee, L. S.

AU - Lee, H. Y.

AU - Wang, C. C.

AU - Tsai, P. H.

AU - Chang-Liao, K. S.

AU - Chen, W. J.

AU - Liu, K. C.

AU - Jeng, P. R.

AU - Tsai, M. J.

PY - 2006

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N2 - The high-K Hf-based charge trapping layer with Al2O3 blocking oxide in metal/Al2O3/HfO2/SiO 2/silicon (MAHOS) structure is proposed. The Al2O 3 as a blocking oxide on high-κ HfO2 and HfAlO charge trapping layers can improve the program/erase speed and has good retention characteristics, indicating that the MAHOS structure is a promising candidate for future high-speed flash memory. The charge trapping characteristics with different metal gates are also investigated.

AB - The high-K Hf-based charge trapping layer with Al2O3 blocking oxide in metal/Al2O3/HfO2/SiO 2/silicon (MAHOS) structure is proposed. The Al2O 3 as a blocking oxide on high-κ HfO2 and HfAlO charge trapping layers can improve the program/erase speed and has good retention characteristics, indicating that the MAHOS structure is a promising candidate for future high-speed flash memory. The charge trapping characteristics with different metal gates are also investigated.

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DO - 10.1109/VTSA.2006.251055

M3 - 会议稿件

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BT - 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers

T2 - 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA

Y2 - 24 April 2006 through 26 April 2006

ER -

Maikap S, Tzeng PJ, Lee LS, Lee HY, Wang CC, Tsai PH et al. High-κ Hf-based charge trapping layer with Al₂O ₃ blocking oxide for high-density flash memory. In 2006 International Symposium on VLSI Technology, Systems, and Applications, VLSI-TSA - Proceedings of Technical Papers. 2006. p. 36-37. 4016591. (International Symposium on VLSI Technology, Systems, and Applications, Proceedings). doi: 10.1109/VTSA.2006.251055