High-κ Hf-based nanocrystal memory capacitors with IrOx metal gate for NAND application

W. Banerjee; S. Maikap

doi:10.1109/MTDT.2009.15

High-κ Hf-based nanocrystal memory capacitors with IrO_x metal gate for NAND application

W. Banerjee^*, S. Maikap

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

1 Scopus citations

Abstract

The memory characteristics of atomic layer deposited high-K Hf-based nanocrystals embedded in high-κ Al₂O₃ films in an n-Si/SiO₂/HfO₂/high-κ nanocrystal/Al ₂O₃/IrO_x memory structure have been investigated. The high-κ nanocrystals can be formed after high temperature (>900°C) annealing process. The high-κ nanocrystal memory devices with a small EOT of ∼ 8 nm show a large hysteresis memory window of ΔV≈3.8 V at a sweeping gate voltage of ±9V, 0.2s. A hysteresis memory window of ΔV≈0.9 V has also been observed under a small sweeping gate voltage of ±7 V. A good uniformity of the high-κ nanocrystal memory devices is also observed. A large memory window of >2V and a low charge loss of 14% are achieved after ∼8×10⁵s (9 days) of retention time owing to the charge confinement in the high-κ nanocrystals.

Original language	English
Title of host publication	Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009
Pages	31-33
Number of pages	3
DOIs	https://doi.org/10.1109/MTDT.2009.15
State	Published - 2009
Event	2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009 - Hsinchu, Taiwan Duration: 31 08 2009 → 02 09 2009

Publication series

Name	Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009

Conference

Conference	2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009
Country/Territory	Taiwan
City	Hsinchu
Period	31/08/09 → 02/09/09

Keywords

AlO
Atomic layer depositio
Endurance
HfAlO
High-κ nanocrystal
Nonvolatile flash memory
Retention

Access to Document

10.1109/MTDT.2009.15

Cite this

Banerjee, W., & Maikap, S. (2009). High-κ Hf-based nanocrystal memory capacitors with IrO_x metal gate for NAND application. In Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009 (pp. 31-33). Article 5279845 (Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009). https://doi.org/10.1109/MTDT.2009.15

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title = "High-κ Hf-based nanocrystal memory capacitors with IrOx metal gate for NAND application",

abstract = "The memory characteristics of atomic layer deposited high-K Hf-based nanocrystals embedded in high-κ Al2O3 films in an n-Si/SiO2/HfO2/high-κ nanocrystal/Al 2O3/IrOx memory structure have been investigated. The high-κ nanocrystals can be formed after high temperature (>900°C) annealing process. The high-κ nanocrystal memory devices with a small EOT of ∼ 8 nm show a large hysteresis memory window of ΔV≈3.8 V at a sweeping gate voltage of ±9V, 0.2s. A hysteresis memory window of ΔV≈0.9 V has also been observed under a small sweeping gate voltage of ±7 V. A good uniformity of the high-κ nanocrystal memory devices is also observed. A large memory window of >2V and a low charge loss of 14% are achieved after ∼8×105s (9 days) of retention time owing to the charge confinement in the high-κ nanocrystals.",

keywords = "AlO, Atomic layer depositio, Endurance, HfAlO, High-κ nanocrystal, Nonvolatile flash memory, Retention",

author = "W. Banerjee and S. Maikap",

year = "2009",

doi = "10.1109/MTDT.2009.15",

language = "英语",

isbn = "9780769537979",

series = "Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009",

pages = "31--33",

booktitle = "Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009",

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}

Banerjee, W & Maikap, S 2009, High-κ Hf-based nanocrystal memory capacitors with IrO_x metal gate for NAND application. in Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009., 5279845, Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009, pp. 31-33, 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009, Hsinchu, Taiwan, 31/08/09. https://doi.org/10.1109/MTDT.2009.15

High-κ Hf-based nanocrystal memory capacitors with IrO_x metal gate for NAND application. / Banerjee, W.; Maikap, S.
Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009. 2009. p. 31-33 5279845 (Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Maikap, S.

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N2 - The memory characteristics of atomic layer deposited high-K Hf-based nanocrystals embedded in high-κ Al2O3 films in an n-Si/SiO2/HfO2/high-κ nanocrystal/Al 2O3/IrOx memory structure have been investigated. The high-κ nanocrystals can be formed after high temperature (>900°C) annealing process. The high-κ nanocrystal memory devices with a small EOT of ∼ 8 nm show a large hysteresis memory window of ΔV≈3.8 V at a sweeping gate voltage of ±9V, 0.2s. A hysteresis memory window of ΔV≈0.9 V has also been observed under a small sweeping gate voltage of ±7 V. A good uniformity of the high-κ nanocrystal memory devices is also observed. A large memory window of >2V and a low charge loss of 14% are achieved after ∼8×105s (9 days) of retention time owing to the charge confinement in the high-κ nanocrystals.

AB - The memory characteristics of atomic layer deposited high-K Hf-based nanocrystals embedded in high-κ Al2O3 films in an n-Si/SiO2/HfO2/high-κ nanocrystal/Al 2O3/IrOx memory structure have been investigated. The high-κ nanocrystals can be formed after high temperature (>900°C) annealing process. The high-κ nanocrystal memory devices with a small EOT of ∼ 8 nm show a large hysteresis memory window of ΔV≈3.8 V at a sweeping gate voltage of ±9V, 0.2s. A hysteresis memory window of ΔV≈0.9 V has also been observed under a small sweeping gate voltage of ±7 V. A good uniformity of the high-κ nanocrystal memory devices is also observed. A large memory window of >2V and a low charge loss of 14% are achieved after ∼8×105s (9 days) of retention time owing to the charge confinement in the high-κ nanocrystals.

KW - AlO

KW - Atomic layer depositio

KW - Endurance

KW - HfAlO

KW - High-κ nanocrystal

KW - Nonvolatile flash memory

KW - Retention

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BT - Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009

T2 - 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009

Y2 - 31 August 2009 through 2 September 2009

ER -

Banerjee W, Maikap S. High-κ Hf-based nanocrystal memory capacitors with IrO_x metal gate for NAND application. In Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009. 2009. p. 31-33. 5279845. (Proceedings of the 2009 IEEE International Workshop on Memory Technology, Design, and Testing, MTDT 2009). doi: 10.1109/MTDT.2009.15