High-κ Ta2O5 film for resistive switching memory application

Y. R. Tsai; K. C. Liao; S. Maikap

doi:10.1109/ULIS.2009.4897578

High-κ Ta₂O₅ film for resistive switching memory application

Y. R. Tsai, K. C. Liao, S. Maikap^*

^*Corresponding author for this work

Department of Electronic Engineering

Chang Gung University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We report a novel nonvolatile resistive switching memory with a Cu/Ta ₂O₅/TiN structure. This memory device has low power (100 μA/1.5 V), large threshold voltage of 0.8V, moderate endurance of 10 ² cycles, and excellent retention with high resistance ratio of 2.4x10² after 10⁵ s (26 hours). Furthermore, the threshold voltage can be increased by both the thickness of Ta₂O₅ solid electrolyte and annealing temperatures, which can make easier to design the memory circuit.

Original language	English
Title of host publication	Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Pages	229-232
Number of pages	4
DOIs	https://doi.org/10.1109/ULIS.2009.4897578
State	Published - 2009
Event	10th International Conference on ULtimate Integration of Silicon, ULIS 2009 - Aachen, Germany Duration: 18 03 2009 → 20 03 2009

Publication series

Name	Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009

Conference

Conference	10th International Conference on ULtimate Integration of Silicon, ULIS 2009
Country/Territory	Germany
City	Aachen
Period	18/03/09 → 20/03/09

Access to Document

10.1109/ULIS.2009.4897578

Cite this

Tsai, Y. R., Liao, K. C., & Maikap, S. (2009). High-κ Ta₂O₅ film for resistive switching memory application. In Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009 (pp. 229-232). Article 4897578 (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009). https://doi.org/10.1109/ULIS.2009.4897578

@inproceedings{603d251c5f0548b28e08b2d68e7c1ffe,

title = "High-κ Ta2O5 film for resistive switching memory application",

abstract = "We report a novel nonvolatile resistive switching memory with a Cu/Ta 2O5/TiN structure. This memory device has low power (100 μA/1.5 V), large threshold voltage of 0.8V, moderate endurance of 10 2 cycles, and excellent retention with high resistance ratio of 2.4x102 after 105 s (26 hours). Furthermore, the threshold voltage can be increased by both the thickness of Ta2O5 solid electrolyte and annealing temperatures, which can make easier to design the memory circuit.",

author = "Tsai, {Y. R.} and Liao, {K. C.} and S. Maikap",

year = "2009",

doi = "10.1109/ULIS.2009.4897578",

language = "英语",

isbn = "9781424437054",

series = "Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009",

pages = "229--232",

booktitle = "Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009",

note = "10th International Conference on ULtimate Integration of Silicon, ULIS 2009 ; Conference date: 18-03-2009 Through 20-03-2009",

}

Tsai, YR, Liao, KC & Maikap, S 2009, High-κ Ta₂O₅ film for resistive switching memory application. in Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009., 4897578, Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009, pp. 229-232, 10th International Conference on ULtimate Integration of Silicon, ULIS 2009, Aachen, Germany, 18/03/09. https://doi.org/10.1109/ULIS.2009.4897578

High-κ Ta₂O₅ film for resistive switching memory application. / Tsai, Y. R.; Liao, K. C.; Maikap, S.
Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009. 2009. p. 229-232 4897578 (Proceedings of the 10th International Conference on ULtimate Integration of Silicon, ULIS 2009).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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N2 - We report a novel nonvolatile resistive switching memory with a Cu/Ta 2O5/TiN structure. This memory device has low power (100 μA/1.5 V), large threshold voltage of 0.8V, moderate endurance of 10 2 cycles, and excellent retention with high resistance ratio of 2.4x102 after 105 s (26 hours). Furthermore, the threshold voltage can be increased by both the thickness of Ta2O5 solid electrolyte and annealing temperatures, which can make easier to design the memory circuit.

AB - We report a novel nonvolatile resistive switching memory with a Cu/Ta 2O5/TiN structure. This memory device has low power (100 μA/1.5 V), large threshold voltage of 0.8V, moderate endurance of 10 2 cycles, and excellent retention with high resistance ratio of 2.4x102 after 105 s (26 hours). Furthermore, the threshold voltage can be increased by both the thickness of Ta2O5 solid electrolyte and annealing temperatures, which can make easier to design the memory circuit.

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